Double-channel operational amplifier structure with high bandwidth and high gain

An operational amplifier and high-bandwidth technology, which is applied in the field of dual-channel operational amplifier structure, can solve problems such as low gain, limited application environment, and low bandwidth, and achieve high gain and high-precision effects

Pending Publication Date: 2020-03-31
西安航天民芯科技有限公司
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

High-bandwidth operational amplifiers have excellent characteristics of fast response and large slew rate, but because they often have low gain, high-gain operational amplifiers have large DC gain and are suitable for precision operational amplifier applications such as instrumentation amplifiers, but Its bandwidth is often low, limiting its application environment

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Double-channel operational amplifier structure with high bandwidth and high gain

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0019] The following will be combined with figure 1 and embodiments to further illustrate the present invention.

[0020] This embodiment provides a dual-channel operational amplifier structure with high bandwidth and high gain, including a high-bandwidth low-gain channel with a 1-stage sub-operational amplifier and a low-bandwidth high-precision channel with no less than 2-stage sub-operational amplifiers; The high-bandwidth low-gain path and the low-bandwidth high-precision path have a common output stage. In order to solve the stability problem faced by multi-stage operational amplifiers, the circuit needs to perform nested Maitreya compensation.

[0021] Such as figure 1 As shown, a dual-channel operational amplifier structure with high bandwidth and high gain includes a high-bandwidth low-gain path with 2-stage sub-op amps and a low-bandwidth high-precision path with 3-stage sub-op amps; the high-bandwidth low-gain path includes Operational amplifier A1, the low-bandwid...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention belongs to the technical field of operational amplifiers, and particularly relates to a double-channel operational amplifier structure with high bandwidth and high gain, which specifically comprises a high-bandwidth low-gain channel with a first-stage sub operational amplifier and a low-bandwidth high-precision channel with at least two stages of sub operational amplifiers, wherein the high-bandwidth low-gain channel and the low-bandwidth high-precision channel have one common output stage; the operational amplifier structure can provide higher gain when the frequency of an inputsignal is lower and provide larger bandwidth when the frequency of the input signal is higher, so that the whole operational amplifier has excellent performances of high bandwidth and high gain at the same time.

Description

technical field [0001] The invention belongs to the technical field of operational amplifiers, in particular to a dual-channel operational amplifier structure with high bandwidth and high gain. Background technique [0002] The integrated circuit industry is the core of the information technology industry, and it is a strategic, basic, and leading industry that supports economic and social development and safeguards national security; in the past two years, European and American countries have frequently imposed chip embargoes on China for various reasons, seriously hindering the The development of my country's economy and national defense has also stimulated the process of domestic chip industrialization. With the introduction of the "National Integrated Circuit Industry Development Promotion Outline" in June 2014, it marks that my country's integrated circuit industry has risen to a national strategic level. [0003] With the rapid development of electronic technology, oper...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): H03F1/02H03F1/42H03F3/68H03F3/45
CPCH03F1/02H03F1/42H03F3/45H03F3/68
Inventor 王晓飞孙权袁婷张精通
Owner 西安航天民芯科技有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap