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Plasma processing apparatus and method for measuring thickness of ring member

A processing device and plasma technology, which is applied in plasma, measuring device, semiconductor/solid-state device manufacturing, etc., can solve the problems of affecting the uniformity, the effect of the focus ring loss on the processing results, the decline of wafer etching characteristics, etc., and achieve a simple structure Effect

Pending Publication Date: 2020-04-10
TOKYO ELECTRON LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The degree of wear of the focus ring has a large impact on the processing results on the wafer
For example, when the height position of the plasma sheath on the focus ring and the plasma sheath on the wafer deviates, the etching characteristics near the outer periphery of the wafer will decrease, affecting uniformity, etc.

Method used

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  • Plasma processing apparatus and method for measuring thickness of ring member
  • Plasma processing apparatus and method for measuring thickness of ring member
  • Plasma processing apparatus and method for measuring thickness of ring member

Examples

Experimental program
Comparison scheme
Effect test

no. 1 approach

[0054] [Structure of plasma processing apparatus]

[0055] figure 1 It is a schematic cross-sectional view showing the structure of the plasma processing apparatus 10 of the first embodiment. The plasma processing device 10 has a gas-tight processing vessel 1 at an electrical ground potential. The processing container 1 is cylindrical and formed of, for example, aluminum. The processing container 1 forms a processing space in which plasma is generated. In the processing container 1 , a mounting table 2 for horizontally supporting a semiconductor wafer (hereinafter, simply referred to as a “wafer”) W as an object to be processed (work-piece: workpiece) is provided. In addition to the wafer W, the stage 2 supports a jig 51 ( figure 2 reference). The structure of the jig 51 will be described later. The stage 2 includes a substrate (pedestal) 2 a and an electrostatic chuck (ESC: Electrostatic chuck) 6 .

[0056] The base material 2a is formed of a conductive metal such as ...

no. 2 approach

[0116] Next, a second embodiment will be described. The plasma processing apparatus 10 of the second embodiment and figure 1 and figure 2 The configuration of the plasma processing apparatus 10 according to the first embodiment shown is the same, and therefore description thereof will be omitted.

[0117] The control unit 100 of the second embodiment will be described in detail. Figure 8 It is a block diagram showing a schematic configuration of a control unit 100 that controls the plasma processing apparatus 10 according to the second embodiment. The control unit 100 of the second embodiment has the image 3 The control unit 100 of the first embodiment shown has substantially the same configuration, and therefore the same reference numerals are assigned to the same parts, and description thereof will be omitted.

[0118] Process controller 110 does not have image 3 The lift control unit 114 shown has a height calculation unit 121 and a lift control unit 122 .

[0119...

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PUM

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Abstract

The invention provides a plasma processing apparatus and a method for measuring thickness of ring member. The mounting table has a first mounting surface on which a target object or a jig is mounted and a second mounting surface on which a ring member is mounted. The jig is used for measuring a thickness of the ring member disposed around the target object and having a facing portion facing an upper surface of the ring member. Elevating mechanisms lift or lower the ring member with respect to the second mounting surface. An acquisition unit acquires gap information indicating a gap dimension between the second mounting surface and the facing portion of the jig. A measurement unit measures a lifted distance of the ring member from the second mounting surface. A thickness calculation unit calculates the thickness of the ring member based on the gap dimension and the measured lifted distance of the ring member.

Description

technical field [0001] The present invention relates to a thickness measuring method of a plasma processing apparatus and a ring member. Background technique [0002] Conventionally, there is known a plasma processing apparatus that performs plasma processing such as etching on an object to be processed such as a semiconductor wafer (hereinafter also referred to as a “wafer”) using plasma. In this plasma processing apparatus, components in the chamber are worn out during plasma processing. For example, a ring member such as a focus ring provided on the outer peripheral portion of the wafer in order to uniformize the plasma may be close to the plasma, resulting in a high loss rate. The degree of wear of the focus ring has a large impact on the on-wafer processing results. For example, when the height positions of the plasma sheath on the focus ring and the plasma sheath on the wafer deviate, the etching characteristics near the outer periphery of the wafer deteriorate, affe...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01J37/244G01B21/08
CPCH01J37/244G01B21/08H01J37/32642H01J37/32715H01L21/68742H01L21/68735H01L21/67253H01L21/67109H01L21/6831H01L21/67069H01L21/3065H01L21/68721H01L21/67259H05H1/46H01J2237/3343H01J2237/24571H01L21/6833
Inventor 尾形敦
Owner TOKYO ELECTRON LTD