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Image sensor and manufacturing method thereof

A technology of image sensor and photodiode, which is applied in the direction of electric solid-state devices, semiconductor devices, radiation control devices, etc., and can solve problems such as reducing quantum efficiency

Active Publication Date: 2020-05-08
TAIWAN SEMICON MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Extra layers in the light path (e.g., opaque and reflective metal layers) limit the amount of light incident on the photodiode, reducing quantum efficiency

Method used

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  • Image sensor and manufacturing method thereof
  • Image sensor and manufacturing method thereof
  • Image sensor and manufacturing method thereof

Examples

Experimental program
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Embodiment Construction

[0047] The following disclosure provides many different embodiments, or examples, for implementing different features of the provided subject matter. Specific examples of components, values, operations, materials, arrangements, etc. are described below to simplify the present disclosure. Of course, these are merely examples and are not intended to be limiting. Other components, values, operations, materials, arrangements, etc. are contemplated. For example, forming a first feature on or over a second feature in the following description may include embodiments in which the first feature and the second feature are formed in direct contact, and may also include embodiments where the first feature and the second feature may be in between. Embodiments in which additional features are formed such that the first and second features may not be in direct contact. Additionally, the present disclosure may repeat reference numerals and / or letters in various instances. This repetition ...

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Abstract

An image sensor includes a substrate and a first photodiode (PD) having a first size in the substrate. The image sensor further includes a second PD having a second size in the substrate, wherein thefirst size is different from the second size. The image sensor further includes a first buffer layer over the substrate. The image sensor further includes a shield layer over the first buffer, whereinthe first buffer layer and the shield layer define a first recess aligned with the first PD and a second recess aligned with the second PD. The image sensor further includes a flicker reduction layerin the first recess, wherein the second recess is free of the flicker reduction layer.

Description

technical field [0001] The disclosure relates to an image sensor and a manufacturing method thereof. Background technique [0002] A complementary metal-oxide-semiconductor (CMOS) image sensor is a pixelated metal-oxide-semiconductor. A CMOS image sensor includes an array of light sensitive picture elements (ie, pixels). Each pixel contains transistors (switching transistors and reset transistors), capacitors, and photosensitive elements (eg, photodiodes). When the photodiode receives incident light, charges are generated in the photodiode. Each photodiode produces electrons proportional to the amount of light incident on the pixel. Furthermore, the electrons are converted into voltage signals in the pixels and further converted into digital signals by means of A / D converters. The peripheral circuit receives digital signals and processes the digital signals to generate images. [0003] CMOS image sensors include additional layers (such as dielectric layers and interconn...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/146
CPCH01L27/1464H01L27/1462H01L27/14625H01L27/14685H01L27/1463H01L27/14623H01L27/14605
Inventor 陈柏瀚陈贞君张復诚李国政
Owner TAIWAN SEMICON MFG CO LTD