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Bulk acoustic wave resonator, packaging method thereof, filter, electronic device

A technology of bulk acoustic wave resonators and resonators, which can be applied to electrical components, impedance networks, etc., and can solve problems such as uncommonly applicable resonator structures

Active Publication Date: 2021-03-12
ROFS MICROSYST TIANJIN CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] However, the conventional frequency trimming method described is not generally applicable to some resonator structures

Method used

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  • Bulk acoustic wave resonator, packaging method thereof, filter, electronic device
  • Bulk acoustic wave resonator, packaging method thereof, filter, electronic device
  • Bulk acoustic wave resonator, packaging method thereof, filter, electronic device

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Embodiment Construction

[0031] The technical solutions of the present invention will be further specifically described below through the embodiments and in conjunction with the accompanying drawings. In the specification, the same or similar reference numerals designate the same or similar components. The following description of the embodiments of the present invention with reference to the accompanying drawings is intended to explain the general inventive concept of the present invention, but should not be construed as a limitation of the present invention.

[0032] figure 1 is a schematic top view of a bulk acoustic wave resonator according to an exemplary embodiment of the present invention; figure 2 is an edge of a bulk acoustic wave resonator according to an exemplary embodiment of the present invention figure 1 A schematic cross-sectional view obtained from the broken line A-B in , showing the encapsulation layers of the resonator. exist figure 1 and figure 2 , the reference signs ar...

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Abstract

The invention discloses a bulk acoustic wave resonator, comprising: a top electrode; a piezoelectric layer; a bottom electrode; an acoustic mirror; and a sealing layer, wherein: the top electrode includes a first top electrode and a second top electrode, and the first A top electrode is attached to the piezoelectric layer, and a gap layer is formed between the first top electrode and the second top electrode in the thickness direction of the resonator; the sealing layer covers at least the upper part of the effective area of ​​the resonator side to form the packaging layer of the resonator. The invention also discloses a packaging method of the bulk acoustic wave resonator, a filter and electronic equipment.

Description

technical field [0001] Embodiments of the present invention relate to the field of semiconductors, and in particular to a bulk acoustic wave resonator, a filter with the resonator, an electronic device with the resonator or the filter, and a bulk acoustic wave resonator encapsulation method. Background technique [0002] Bulk acoustic wave resonators are widely used in various electronic components in the field of modern communications, such as filters, duplexers and so on. In order to protect, for example, an FBAR (film bulk acoustic resonator, film bulk acoustic resonator) product from the influence of the external environment (such as particles and water vapor), it is necessary to perform wafer-level packaging on the FBAR product. Figure 9 It shows a schematic cross-sectional view of the wafer-level packaging of a single product in the existing design, wherein the reference signs are as follows: 201: product sheet substrate; 202: packaging wafer (Cap wafer), used to prot...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H03H3/02H03H9/13H03H9/02H03H9/17H03H9/54
CPCH03H3/02H03H9/02H03H9/131H03H9/173H03H9/174H03H9/175H03H9/547H03H2003/021H03H2003/023H03H2003/025H03H2003/028H03H2009/02173
Inventor 徐洋庞慰郝龙张孟伦
Owner ROFS MICROSYST TIANJIN CO LTD
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