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Chemical vapor deposition apparatus and method and power compensation module therefor

A chemical vapor deposition, power compensation technology, applied in gaseous chemical plating, metal material coating process, coating, etc., to achieve stable transient behavior, improve quality, and short transient time.

Active Publication Date: 2022-06-28
METAL INDS RES & DEV CENT
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The chamber chamber is configured to perform the deposition process at a predetermined power value

Method used

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  • Chemical vapor deposition apparatus and method and power compensation module therefor
  • Chemical vapor deposition apparatus and method and power compensation module therefor
  • Chemical vapor deposition apparatus and method and power compensation module therefor

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Embodiment Construction

[0021] Embodiments of the present invention are discussed in detail below. It should be appreciated, however, that the embodiments provide many applicable inventive concepts that can be embodied in a wide variety of specific contexts. The specific embodiments discussed are provided for illustration only, and are not intended to limit the scope of the invention.

[0022] figure 1 It is a schematic diagram of a chemical vapor deposition apparatus 100 according to an embodiment of the present invention. The chemical vapor deposition apparatus 100 uses plasma technology for deposition process, which may be plasma enhanced chemical vapor deposition (PECVD) equipment, electron cyclotron resonance chemical vapor deposition (electron cyclotron resonance chemical vapor deposition; ECR-CVD) ) equipment, inductively coupled plasma chemical vapor deposition (inductively coupled plasma chemical vapor deposition; ICP-CVD) equipment, or other suitable chemical vapor deposition equipment. ...

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Abstract

The invention discloses a chemical vapor deposition equipment, a method and a power compensation module used for the equipment. Chemical vapor deposition equipment uses plasma technology for deposition process, and it includes reaction chamber cavity, radio frequency signal source and power compensation module. The radio frequency signal source is used for generating and outputting radio frequency signals to the electrodes of the chamber cavity when the deposition process starts. The power compensation module is electrically connected to the radio frequency signal source, and is used for temporal power compensation of the radio frequency signal output by the radio frequency signal source. The invention can make the plasma generated in the reaction chamber of the chemical vapor deposition equipment have a shorter transient time and a more stable transient behavior, thereby improving the quality of deposits.

Description

technical field [0001] The present invention refers to a radio frequency signal compensation mechanism, and in particular, to a chemical vapor deposition apparatus with a radio frequency signal compensation mechanism, a method thereof, and a power compensation module. Background technique [0002] In semiconductor-related industries, plasma-type chemical vapor deposition equipment can perform processes at low temperatures and has a high deposition rate, so it has been widely used to form thin films. However, the plasma inside the reaction chamber cavity of this type of chemical vapor deposition equipment belongs to multiple physical and chemical couplings, which include interactive effects such as electric field, plasma field concentration, flow field, temperature field, chemical chain reaction, etc. At the beginning of the deposition process, after the RF signal enters the cavity, there will be an unstable plasma state, and the duration of this state is also called the tran...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C16/513C23C16/54
CPCC23C16/513C23C16/54
Inventor 洪政源田伟辰黄俊凯叶昌鑫吴以德
Owner METAL INDS RES & DEV CENT