Method for producing silicon carbide single crystal

A technology of silicon carbide single crystal and manufacturing method, which is applied in chemical instruments and methods, single crystal growth, single crystal growth, etc., can solve the problems of easy generation of heterogeneous polytypes, and achieve the effect of preventing the mixing of heterogeneous polytypes

Active Publication Date: 2020-06-19
CENT GLASS CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0007] In the case of growing crystals on an on substrate of 4H-SiC, good morphology can be obtained as described above, but there is a problem that heterogeneous polytypes are easily generated other than 4H-SiC

Method used

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  • Method for producing silicon carbide single crystal
  • Method for producing silicon carbide single crystal
  • Method for producing silicon carbide single crystal

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0068] For the 4H-SiC single crystal ingot, cut the surface inclined at 63° from the (000-1) plane along the [1-100] direction to obtain seed crystals. The cut surface was fixed to a carbon pulling shaft as the lower end, and held at the upper part of a resistance heating furnace. A mixed melt of silicon and chromium (20 mol % of chromium) was prepared in a graphite crucible installed in the center of the furnace, and the temperature was raised. The atmosphere gas was helium, and 0.4% by volume of nitrogen was added. In order to smooth the growth surface, the seed crystal was brought into contact with the melt when the melt reached 1764° C. during the temperature rise, and the convex portion under the seed crystal was dissolved. Thereafter, the temperature in the furnace was stabilized at 1920° C., which is the target temperature, to start crystal growth from the lower end of the seed crystal. During growth, the pulling shaft was rotated at 30 rpm in forward and reverse dire...

Embodiment 2～7

[0071] In Examples 2 to 7, 4H-SiC single crystal ingots were respectively used to cut out 60°, 61°, 62°, 64°, 65°, 68° from the (000-1) plane along the [1-100] direction. °, except for the crystal growth in the same steps as in Example 1.

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Abstract

The purpose of the present invention is to produce a 4H-SiC single crystal having good morphology while preventing the contamination with different polymorphic crystal forms regardless of the presenceor absence of doping in the growth of a 4H-SiC single crystal by a TSSG method. The present inventors have made intensive and extensive studies on the influence of an off angle to a grown crystal ina SiC single crystal production method in the TSSG method. As a result, it is found that the contamination with different polymorphic crystal forms is less likely to occur during the growth of a 4H-SiC single crystal when the off angle is adjusted to 60 to 68 DEG, and that a grown crystal having good morphology can be produced by growing the crystal after smoothing the surface of a seed crystal bya melt-back method.

Description

technical field [0001] The present invention relates to a method of manufacturing a high-quality silicon carbide single crystal suitable as a material for a wide-gap semiconductor device by a liquid-phase growth method. Background technique [0002] Silicon carbide (SiC) has a larger bandgap and dielectric breakdown voltage than silicon (Si), which is widely used as a material for electronic devices, and is expected to be a substrate material for power devices exceeding devices using Si substrates. A SiC substrate is obtained by cutting out an ingot of SiC single crystal. As methods for producing SiC ingots, the following methods are known: a method of growing SiC crystals in a gas phase (vapor phase growth method); and a method of growing SiC crystals in a liquid phase (liquid phase growth method). Compared with the vapor phase growth method, the liquid phase growth method performs crystal growth in a state close to thermal equilibrium, so it can be expected to obtain a hi...

Claims

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Application Information

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Patent Type & AuthorityApplications(China)
IPC IPC(8): C30B29/36C30B19/04C30B19/12H01L21/208
CPCC30B29/36C30B15/36C30B19/04C30B19/12H01L29/1608H01L29/167
Inventor熊谷和人梅崎智典
OwnerCENT GLASS CO LTD