Micron light emitting diode device, manufacturing method thereof and display panel

Abstract

The embodiment of the invention provides a micron light-emitting diode device, a manufacturing method thereof and a display panel, the micron light-emitting diode device comprises a plurality of light-emitting units, each light-emitting unit comprises a first semiconductor layer, a second semiconductor layer and a multi-quantum well layer located between the first semiconductor layer and the second semiconductor layer; a common electrode layer which is in a grid shape, grids of the common electrode layer form a plurality of first openings in a surrounding mode, and the first openings expose the light emitting units; a plurality of driving electrodes which are positioned on one side, far away from the multi-quantum well layer, of the second semiconductor layer; at least one meta-structure layer located on a light emitting display side of the light emitting unit; each super-structure layer comprises a plurality of super-structure units; the first openings expose the super-structure units, the super-structure units correspond to the light-emitting units in a one-to-one mode, each super-structure unit is provided with a plurality of concave structures or a plurality of convex structures and used for changing the light intensity distribution characteristic of emergent light, ultrahigh light-emitting brightness and small-angle emergent light of the emergent light are achieved, and the light utilization rate is increased.

Description

technical field [0001] The invention relates to display technology, in particular to a micron light-emitting diode device, a manufacturing method thereof, and a display panel. Background technique [0002] Micron light-emitting diode device (Microled) involves the technology of thinning, miniaturizing, and arraying LED structure design, and its size is generally at the micron level. The display technology based on micro-light-emitting diodes is to transfer micro-light-emitting diodes to the drive circuit substrate in batches, and then package them to form micro-light-emitting diode devices. [0003] At present, there is a problem of reduced efficiency when micron light-emitting diode devices are developing towards miniaturization. When their size is very small, their performance is affected by sidewall effects associated with surface and internal defects (such as open bonds, contamination, and structural damage), which lead to accelerated recombination of non-radiative carr...

AI Technical Summary

Problems solved by technology

[0003] At present, when micron light-emitting diode devices are developing towards miniaturization, there is a problem of reduced efficiency.

When their size is very small, their performance is affected by sidewall effects associated with surface and internal defects (such as open bonds, contamination, and structural damage), which lead to accelerated recombination of non-radiative carriers, greatly reducing the micron The luminous efficiency of light-emitting diode devices, in order to obtain higher luminous brightness, needs to be achieved by increasing the operating current and operating voltage, which poses a great challenge to the heat dissipation of micron light-emitting diode devices

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