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Photodetectors, display substrates
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A technology for photodetectors and display substrates, applied in circuits, electrical components, semiconductor devices, etc., can solve problems that affect the performance of photodetectors
Active Publication Date: 2022-04-15
BOE TECH GRP CO LTD
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Problems solved by technology
[0004] The present invention at least partly solves the problem that the existing photodetector will generate dark current and affect the performance of the photodetector, and provides a photodetector that reduces the generation of dark current
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Embodiment 1
[0037] Such as Figure 1 to Figure 7 As shown, the present embodiment provides a photodetector (MSM), comprising:
[0038] base1;
[0039] a first electrode 2 (HV), located on the substrate 1;
[0040] The second electrode 3 (sense) is located on the substrate 1, and there is a gap between the second electrode 3 and the first electrode 2;
[0041] The semiconductor layer 4 is located on the substrate 1 and connects the first electrode 2 and the second electrode 3 , wherein, on a plane parallel to the substrate 1 , the cross-sectional areas of the first electrode 2 and the second electrode 3 are different.
[0042] It should be noted that some studies have shown that by increasing the area asymmetry of the anode and cathode of the photodetector or the distance between the anode and the cathode can effectively reduce the dark current of the photodetector (when the photodetector is not affected by When illuminated, a small amount of carriers remaining in the semiconductor stru...
Embodiment 2
[0067] Such as Figure 1 to Figure 7 As shown, this embodiment provides a display substrate, including:
[0068] A plurality of photodetectors, the photodetector is the photodetector in embodiment 1;
[0069] A plurality of pixel units arranged in an array correspond to the photodetectors one by one.
[0070] Wherein, that is to say, one pixel unit corresponds to one photodetector, and the distance between the first electrode 2 and the second electrode 3 of the photodetector is larger than the size of the pixel unit.
[0071] In the photodetector of the present application in this embodiment, the dark current of the photodetector can be reduced by increasing the asymmetry between the first electrode 2 and the second electrode 3 (different effective areas or different materials).
[0072] Preferably, the display substrate further includes: a plurality of transistors 6, located between the substrate 1 and the first electrode 2 and / or the second electrode 3; a shield metal laye...
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Abstract
The invention provides a photodetector and a display substrate, belonging to the field of display technology, which can at least partially solve the problem that the existing photodetectors will generate dark current and affect the performance of the photodetectors. A photodetector of the present invention includes: a substrate; a first electrode located on the substrate; a second electrode located on the substrate with a gap between the second electrode and the first electrode; a semiconductor layer located on the substrate, and the second electrode located on the substrate. One electrode is connected to the second electrode, wherein, on a plane parallel to the substrate, the cross-sectional areas of the first electrode and the second electrode are different.
Description
technical field [0001] The invention belongs to the field of display technology, and in particular relates to a photoelectric detector and a display substrate. Background technique [0002] In the display panel of the prior art, in order to detect the light emitted by the display panel itself or the light irradiated on the display panel from the outside, a photodetector is generally arranged in the display panel. A general photodetector includes a first electrode (sense electrode), a second electrode (HV electrode), and a semiconductor structure connecting the first electrode and the second electrode. When the light of a specific wavelength is irradiated on the semiconductor structure, a large number of carriers are generated in the semiconductor structure (equivalent to the improvement of the conductivity of the semiconductor structure), so that the conduction between the first electrode and the second electrode is achieved, so as to realize the specific wavelength. light ...
Claims
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