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Chemical source introducing system of atomic layer deposition coating equipment

A technology of atomic layer deposition and coating equipment, which is applied in the direction of gaseous chemical plating, coating, metal material coating process, etc., can solve the problems of few types of chemical source gas introduction, the quality of film-forming film products, and the decline, so as to avoid Product quality problems, guaranteed film-forming effect, shortened time effect

Pending Publication Date: 2020-09-25
OPTORUN SHANGHAI CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, the chemical source introduction system of atomic layer deposition coating equipment has the following problems: there are few types of chemical source gases; chemical sources are easy to form films in the delivery pipeline and other parts during the introduction process, resulting in a decline in the quality of film products, etc.

Method used

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  • Chemical source introducing system of atomic layer deposition coating equipment
  • Chemical source introducing system of atomic layer deposition coating equipment
  • Chemical source introducing system of atomic layer deposition coating equipment

Examples

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Embodiment

[0022] Embodiment: In this embodiment, the chemical source introduction system of the atomic layer deposition coating equipment is used to introduce the chemical gas in the atomic layer deposition coating process into the film forming chamber, so as to form films on the products loaded in the film forming chamber.

[0023] Such as figure 1 As shown, the main body of the chemical source introduction system in this embodiment includes a valve seat bottom plate 1 , a gas introduction flange 2 , and a chemical source introduction pipeline 3 . Among them, the chemical source introduction pipeline 3 corresponding to the quantity of the chemical gas required for the atomic layer deposition film forming process can be provided on the valve seat bottom plate 1, and several chemical source introduction pipelines 3 can be installed on the gas inlet flange 2. On the bottom plate 1 of the valve seat. One end of the chemical source introduction pipeline 3 is arranged on the atmospheric sid...

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PUM

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Abstract

The invention relates to the technical field of thin film preparation, in particular to a chemical source introduction system of atomic layer deposition coating equipment. The chemical source introduction system comprises a plurality of chemical source introduction pipelines and a valve seat bottom plate, wherein the chemical source introduction pipelines are arranged on the valve seat bottom plate through gas introduction flanges; valve seat bottom plate heaters are arranged on the valve seat bottom plate; vacuum side heaters are additionally arranged at the positions, located on the vacuum sides of the gas introduction flanges, on the peripheries of the chemical source introduction pipelines; and the valve seat bottom plate heaters and the vacuum side heaters are jointed to carry out multi-stage heating on the chemical source introduction pipelines. The chemical source introduction system of the atomic layer deposition coating equipment provided by the invention has the advantages that multiple chemical sources can be introduced at the same time without causing condensation; each chemical source is heated in a multi-stage way, so that the process cycle time is further shortened;and a film forming effect of an atomic layer deposition coating process is ensured, the problem that film-forming particles exits in a product is solved, and the product quality is improved.

Description

technical field [0001] The invention relates to the technical field of thin film preparation, in particular to a chemical source introduction system of atomic layer deposition coating equipment. Background technique [0002] Atomic layer deposition (ALD) is a more commonly used coating technology, and its reaction process is generally as follows: 1) The reaction precursor enters the reaction chamber in a pulsed manner and chemically adsorbs on the substrate surface; 2) After the surface is saturated, use The inert gas flushes the excess reaction precursor out of the reaction chamber; 3) The second chemical precursor enters the reaction chamber in a pulsed manner and reacts with the precursor chemically adsorbed on the surface last time; 4) After the reaction is complete Finally, the excess precursor and by-products are blown out of the reaction chamber with an inert gas. [0003] At present, the chemical sources used in atomic layer deposition coating machines are usually l...

Claims

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Application Information

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IPC IPC(8): C23C16/455C23C16/52
CPCC23C16/45544C23C16/45561C23C16/52
Inventor 崔国东戴秀海余海春董黄华魏晓庆
Owner OPTORUN SHANGHAI CO LTD
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