Test structure for measuring eutectic bonding alignment deviation

Abstract

The invention discloses a test structure for measuring eutectic bonding alignment deviation, which comprises a plurality of top silicon strips formed on the first surface of a first silicon wafer anda second bonding material block formed on the first surface of a second silicon wafer, and a first bonding material layer is formed on the surface of each top silicon strip; each top silicon strip isused as the scale of the alignment deviation of eutectic bonding; the second bonding material block is connected with the first test liner; the first bonding material layer at the top of each top silicon strip is connected with the corresponding second test liner; when alignment deviation measurement is carried out, the conduction relationship between the first test pad and each second test pad ismeasured; when conduction is carried out, the second bonding material block is bonded with the first bonding material layer at the top of the top silicon strip-shaped top at the corresponding position, and therefore the alignment deviation of eutectic bonding is determined. According to the structure disclosed in the invention, the alignment precision of the bonding machine can be effectively monitored.

Description

technical field [0001] The invention relates to a semiconductor integrated circuit, in particular to a test structure for measuring alignment deviation of eutectic bonding. Background technique [0002] Such as figure 1 Shown is a schematic diagram of an existing silicon-based MEMS motion sensor, which includes three silicon wafers bonded together, namely a third silicon wafer 101 , a first silicon wafer 102 and a second silicon wafer 103 . [0003] Among them, the silicon-based MEMS motion sensor is formed on the first silicon wafer 102, the third silicon wafer 101 is used as the capping layer of the first silicon wafer 102, and a CMOS integrated circuit is formed on the first silicon wafer 103. The circuit controls the silicon-based MEMS motion sensor. [0004] A cavity 1 is formed on the third silicon wafer 101 . [0005] The composition of the silicon-based MEMS motion sensor includes fixed electrodes and movable electrodes, and the interval between the fixed electrod...

AI Technical Summary

Problems solved by technology

However, after the eutectic bonding of the second silicon wafer 103 and the first silicon wafer 102, the deviation of the opening pattern 203d cannot be measured, because after bonding, the opening pattern 203d is the The interior of the overall structure composed of the second silicon wafer 103 and the first silicon wafer 102, rather than the surface

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