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Substrate warpage correcting method, computer storage medium, and substrate warpage correction device

A substrate and warpage technology, applied in the fields of substrate warpage correction, computer storage media and substrate warpage correction devices, can solve problems such as inability to perform exposure with high precision, inability to transfer heat, and wafer warpage

Pending Publication Date: 2020-10-20
TOKYO ELECTRON LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] However, wafers may warp due to pre-processing such as film formation and etching
When the wafer is warped, heat may not be transferred uniformly from the hot plate to the wafer during the heat treatment of the wafer, or exposure may not be performed with high precision during the exposure treatment, resulting in malfunctions.

Method used

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  • Substrate warpage correcting method, computer storage medium, and substrate warpage correction device
  • Substrate warpage correcting method, computer storage medium, and substrate warpage correction device
  • Substrate warpage correcting method, computer storage medium, and substrate warpage correction device

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no. 1 approach

[0100] Figure 8 It is an explanatory diagram of a wafer W to be processed in the present embodiment. The vertical axis represents the warpage amount, which is the distance from the reference plane in each area of ​​the wafer W before the surface roughening treatment, and the value of this area is positive in the area of ​​the wafer W closer to the front side than the reference plane. In addition, the horizontal axis of the figure represents the respective positions of the above regions, and the center of the wafer W is taken as a reference point.

[0101] As the wafer W to be processed, when Figure 8 When it is determined that the wafer W has an inverted U-shape in cross-sectional view and the center of which protrudes most on the front side, in the warpage correction method of this embodiment, the wafer W is processed, for example, as follows: .

[0102] (Get the amount of warpage)

[0103] The control unit 180 of the surface roughening treatment apparatus 100 extracts ...

no. 2 approach

[0119] Figure 9 with Figure 10 is a diagram showing another example of the wafer W, Figure 9 It is a plan view of the wafer W, and the distance from the reference plane of each region in the wafer W is expressed in shades, and the larger the amount of protrusion from the front side of the reference plane, the darker the color. Figure 10 yes means Figure 9 A graph showing the relationship between the distance from the reference plane and the position of the region in each region of the wafer W in the portion of the solid line L shown in .

[0120] Figure 9 with Figure 10 The illustrated wafer W has a protruding shape toward the front side, and the area with a large amount of protrusion protruding toward the front side is not the central portion of the wafer W, specifically, the area A surrounded by dotted lines.

[0121] The wafer processing of the first embodiment is performed on a wafer W as a processing object such as Figure 8 The process shown is performed whe...

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Abstract

A substrate warpage correcting method according to the present disclosure corrects warpage of a substrate without treating the surface of the substrate. This substrate warpage correcting method includes a surface roughening step for, by using a surface roughening device that is configured so as to be able to roughen the rear surface of a substrate, roughening the rear surface of the substrate, forming grooves in the rear surface, and correcting the warpage of the substrate.

Description

technical field [0001] (Cross-reference of related application) [0002] This application claims priority based on Japanese Patent Application No. 2018-44218 filed in Japan on March 12, 2018, and uses the content thereof here. [0003] The invention relates to a warpage correction method for correcting substrate warpage, a computer storage medium and a substrate warpage correction device. Background technique [0004] For example, in the manufacturing process of a semiconductor device, a photolithographic process is performed to form a predetermined resist pattern on a wafer, and the photolithographic process is sequentially performed on a semiconductor wafer (hereinafter referred to as a "wafer") as a substrate. Resist coating treatment to form a resist film by applying a resist solution; exposure treatment to expose a predetermined pattern on the resist film; heat treatment to promote chemical reactions in the resist film after exposure (post-exposure bake treatment); de...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/304H01L21/027
CPCH01L21/304H01L21/027B24B19/02B24B41/0475B24B7/228H01L21/67046H01L21/67219H01L21/6719H01L21/67178H01L21/67092H01L21/67225
Inventor 兼竹望久保明广小玉辉彦山本太郎泷口靖史冈本芳树保坂隼斗
Owner TOKYO ELECTRON LTD
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