4results about How to "Correct warping" patented technology

The present invention addresses the problem of providing a transfer wafer and a method for transferring an LED element, wherein warpage generated in the wafer is more easily corrected during transfer of the LED element. A transfer wafer includes: a support substrate having a thickness of 100 [mu] m or more and 400 [mu] m or less; and a plurality of LED elements provided in a predetermined array on one main surface of the support substrate, the transfer wafer being used for transferring the plurality of LED elements to the entire circuit substrate.

The utility model belongs to the technical field of welding of thermoplastic polymer materials, composite materials, ceramics, metal and the like, and relates to a low-welding-pressure microwave-resistance combined fusion welding device which comprises a welding head system, an operation platform and a robot system. The robot system is located on one side of the operation platform, and a to-be-welded part is placed on the operation platform. The welding head system is designed according to the characteristic that polar molecular materials generate vibration under the action of a microwave field and then generate heat, the welding head system can correct and fix the composite material parts when welding the large-size composite material parts, the function of providing clamping force is achieved, enough welding pre-pressure and cooling pressure maintaining time are provided in the welding process, and the welding head system can be used for welding the large-size composite material parts. And the welding efficiency and the welding quality are effectively improved.

This invention provides a wafer storage device and semiconductor equipment. The temperature control unit includes a cooling module and a preheating module, which are thermally connected to the wafer carrier plate through a thermally conductive structure. In the preheating mode, the preheating module heats the wafer carrier plate to a first preset temperature. Due to the increased temperature of the wafer carrier plate, the high-temperature wafer will not break due to a sudden temperature drop after entering the wafer storage device. After the wafer is placed on the wafer carrier plate, it is still at a relatively high temperature. Under the influence of the supporting force of the wafer carrier plate and its own gravity, the warpage of the wafer will be corrected to a certain extent. Before certain process steps, the preheating module can preheat the wafer in advance, thereby reducing the heating time of the process cavity and improving the efficiency of subsequent processes. In the cooling mode, the preheating module and the cooling module work simultaneously to linearly cool the wafer carrier plate to a second preset temperature, which can avoid sudden temperature changes of the wafer and reduce the probability of wafer breakage during cooling.