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Substrate table and plasma in-situ cleaning method

A plasma and substrate stage technology, applied in gaseous chemical plating, metal material coating process, coating, etc., can solve the problems of complicated operation procedures, secondary pollution, heavy workload, etc., and improve the physical cleaning effect. Effect

Active Publication Date: 2020-11-10
SHANGHAI ZHENGSHI TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, it is difficult to remove these attachments simply by cleaning with a vacuum cleaner; professional cleaning after dismantling the equipment is effective, but the workload is heavy and the operating procedures are cumbersome; can plasma be used for in-situ cleaning? Because of the small size of the vacuum chamber, it is difficult for traditional plasma generators to perform plasma cleaning on the inner wall of the vacuum chamber without disassembling the equipment; During the operation, the impurities in the air will also affect the cleaning effect, because it will cause other unnecessary secondary pollution and other problems

Method used

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  • Substrate table and plasma in-situ cleaning method

Examples

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Effect test

Embodiment 1

[0023] Use a vacuum system to reduce the air pressure in the vacuum chamber to 2.0*10 -2 Pa, then into Ar, the Ar flow rate is 50sccm (sccm: standard cubic centimeter per minute); through the adjustment of the vacuum valve, the air pressure in the vacuum chamber is maintained at 8.0Pa, the DC power supply is turned on, the DC voltage is 230V, and the metal sheet and the vacuum chamber Plasma is generated between the inner walls, keeping the substrate table rotating at a rotational speed of 0.2 rpm while moving up / down at a rate of 0.5 mm / rotation. During the whole cleaning process, the DC power supply and the vacuum system keep working. The whole cleaning time: 30 minutes. Because the vacuum chamber is not disassembled before and after cleaning, the metal base, insulating sleeve, metal wire and metal sheet are taken out after cleaning, the wire is pulled out from the wire plug, and the vacuum chamber can be used normally.

Embodiment 2

[0025] Use a vacuum system to reduce the air pressure in the vacuum chamber to 2.0*10 -2 Pa, then Ar and O 2 , Ar flow 100sccm, O 2 The flow rate is 5.0sccm; through the adjustment of the vacuum valve, the air pressure in the vacuum chamber is kept at 8.0Pa, the DC power supply is turned on, the DC voltage is 230V, plasma is generated between the metal sheet and the inner wall of the vacuum chamber, and the substrate table is kept at 0.4 rpm The rotation speed rotates while moving up / down at a speed of 0.5 mm / rev. During the whole cleaning process, the DC power supply and the vacuum system keep working. The whole cleaning time: 15 minutes. Because the vacuum chamber is not disassembled before and after cleaning, the metal base, insulating sleeve, metal wire and metal sheet are taken out after cleaning, the wire is pulled out from the wire plug, and the vacuum chamber can be used normally.

Embodiment 3

[0027] As comparative example 1 and example 2, this example adopts traditional surface cleaning technology. First disassemble and separate the vacuum chamber from the system, polish the inner wall of the vacuum chamber with 2000# water sandpaper, and remove the impurities adsorbed on the surface of the inner wall of the vacuum chamber by physical grinding; then wipe the inner wall of the vacuum chamber with acetone until it is clean; then The vacuum chamber is assembled; the sealing is tested to a qualified state, and the entire cleaning cycle takes 12 hours. The water abrasive paper used in this embodiment tends to cause certain physical damage to the inner wall of the vacuum chamber during the grinding process. At the same time, the operation cycle is longer, and the cleaning efficiency is significantly lower than that of Embodiment 1 and Embodiment 2.

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Abstract

The invention provides a substrate table. The substrate table comprises an axisymmetric cylindrical vacuum cavity. The substrate table capable of rotating automatically and moving up and down is arranged in the center of the vacuum cavity. A metal base with a metal wire is placed on the substrate table. The metal base is electrically insulated from the substrate table. A metal sheet at the top endof the metal wire serves as a discharge electrode and is close to the inner wall of the vacuum cavity. The metal sheet and the vacuum cavity are internally connected with a positive electrode and a negative electrode of a direct-current power supply respectively. The direct-current power supply is arranged outside the vacuum cavity. The metal base on the substrate table is connected with the positive electrode of the direct-current power supply through a vacuum flange of an observation window of the vacuum cavity. The negative electrode of the direct-current power supply is connected with a metal cavity wall of the vacuum cavity and grounded. During cleaning, direct-current plasma glow discharge generated between the metal sheet and the inner wall of the vacuum cavity is used for cleaning. The device is easy to operate and high in cleaning efficiency.

Description

technical field [0001] The invention belongs to the technical field of vacuum microelectronics, and in particular relates to a method for cleaning the inner wall of a vacuum chamber in situ by using plasma excited by DC glow discharge. Background technique [0002] Microwave plasma chemical vapor deposition (abbreviated as MPCVD) is a commonly used method for preparing materials. Especially in the preparation of the diamond film, the principle is to use microwave energy to excite the reactive gas into a plasma state, and deposit the diamond film on the substrate stage in the central area of ​​the vacuum chamber. Because the plasma is excited by microwave energy and the plasma is pure, the microwave plasma CVD method is the preferred method for preparing diamond films with high quality, large area and high speed. The general working principle is to pass the reaction gas into an axisymmetric cylindrical vacuum cavity, and transmit the microwave generated by the microwave gene...

Claims

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Application Information

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IPC IPC(8): C23C16/44
CPCC23C16/4401C23C16/4405
Inventor 满卫东龚闯朱长征吴剑波
Owner SHANGHAI ZHENGSHI TECH CO LTD