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Substrate stage and method for in-situ cleaning with plasma

A technology of substrate table and metal sheet, which is applied in the direction of metal material coating process, coating, gaseous chemical plating, etc., and can solve the problems of difficult removal of attachments, heavy workload, cumbersome operating procedures, etc.

Active Publication Date: 2021-08-20
SHANGHAI ZHENGSHI TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, it is difficult to remove these attachments simply by cleaning with a vacuum cleaner; professional cleaning after dismantling the equipment is effective, but the workload is heavy and the operating procedures are cumbersome; can plasma be used for in-situ cleaning? Because of the small size of the vacuum chamber, it is difficult for traditional plasma generators to perform plasma cleaning on the inner wall of the vacuum chamber without disassembling the equipment; During the operation, the impurities in the air will also affect the cleaning effect, because it will cause other unnecessary secondary pollution and other problems

Method used

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  • Substrate stage and method for in-situ cleaning with plasma

Examples

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Effect test

Embodiment 1

[0023] Use a vacuum system to reduce the air pressure in the vacuum chamber to 2.0*10 -2 Pa, then into Ar, the Ar flow rate is 50sccm (sccm: standard cubic centimeter per minute); through the adjustment of the vacuum valve, the air pressure in the vacuum chamber is maintained at 8.0Pa, the DC power supply is turned on, the DC voltage is 230V, and the metal sheet and the vacuum chamber Plasma is generated between the inner walls, keeping the substrate table rotating at a rotational speed of 0.2 rpm while moving up / down at a rate of 0.5 mm / rotation. During the whole cleaning process, the DC power supply and the vacuum system keep working. The whole cleaning time: 30 minutes. Because the vacuum chamber is not disassembled before and after cleaning, the metal base, insulating sleeve, metal wire and metal sheet are taken out after cleaning, the wire is pulled out from the wire plug, and the vacuum chamber can be used normally.

Embodiment 2

[0025] Use a vacuum system to reduce the air pressure in the vacuum chamber to 2.0*10 -2 Pa, then Ar and O 2 , Ar flow 100sccm, O 2 The flow rate is 5.0sccm; through the adjustment of the vacuum valve, the air pressure in the vacuum chamber is kept at 8.0Pa, the DC power supply is turned on, the DC voltage is 230V, plasma is generated between the metal sheet and the inner wall of the vacuum chamber, and the substrate table is kept at 0.4 rpm The rotation speed rotates while moving up / down at a speed of 0.5 mm / rev. During the whole cleaning process, the DC power supply and the vacuum system keep working. The whole cleaning time: 15 minutes. Because the vacuum chamber is not disassembled before and after cleaning, the metal base, insulating sleeve, metal wire and metal sheet are taken out after cleaning, the wire is pulled out from the wire plug, and the vacuum chamber can be used normally.

Embodiment 3

[0027] As comparative example 1 and example 2, this example adopts traditional surface cleaning technology. First disassemble and separate the vacuum chamber from the system, polish the inner wall of the vacuum chamber with 2000# water sandpaper, and remove the impurities adsorbed on the surface of the inner wall of the vacuum chamber by physical grinding; then wipe the inner wall of the vacuum chamber with acetone until it is clean; then The vacuum chamber is assembled; the sealing is tested to a qualified state, and the entire cleaning cycle takes 12 hours. The water abrasive paper used in this embodiment tends to cause certain physical damage to the inner wall of the vacuum chamber during the grinding process. At the same time, the operation cycle is longer, and the cleaning efficiency is significantly lower than that of Embodiment 1 and Embodiment 2.

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Abstract

The invention provides a substrate stage, which includes an axisymmetric cylindrical vacuum chamber, and in the center of the vacuum chamber, there is a substrate stage that can spin and move up and down. A metal base with a wire is placed on the substrate table, and the metal base is electrically insulated from the substrate table. There is a metal sheet on the top of the wire as a discharge electrode, and the metal sheet is close to the inner wall of the vacuum chamber. The metal sheet and the inside of the vacuum chamber are respectively connected to a positive pole and a negative pole of a DC power supply. The DC power supply is arranged outside the vacuum chamber, and the metal base on the substrate table is connected to the positive pole of the DC power supply through the vacuum flange of the observation window of the vacuum chamber; The negative pole of the DC power supply is connected to the metal chamber wall of the vacuum chamber and grounded at the same time. When cleaning, the DC plasma glow discharge generated between the metal sheet and the inner wall of the vacuum chamber is used for cleaning. The invention has simple operation and high cleaning efficiency.

Description

technical field [0001] The invention belongs to the technical field of vacuum microelectronics, and in particular relates to a method for cleaning the inner wall of a vacuum chamber in situ by using plasma excited by DC glow discharge. Background technique [0002] Microwave plasma chemical vapor deposition (abbreviated as MPCVD) is a commonly used method for preparing materials. Especially in the preparation of the diamond film, the principle is to use microwave energy to excite the reactive gas into a plasma state, and deposit the diamond film on the substrate stage in the central area of ​​the vacuum chamber. Because the plasma is excited by microwave energy and the plasma is pure, the microwave plasma CVD method is the preferred method for preparing diamond films with high quality, large area and high speed. The general working principle is to pass the reaction gas into an axisymmetric cylindrical vacuum cavity, and transmit the microwave generated by the microwave gene...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C16/44
CPCC23C16/4401C23C16/4405
Inventor 满卫东龚闯朱长征吴剑波
Owner SHANGHAI ZHENGSHI TECH CO LTD