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Vertical compound semiconductor structure and manufacturing method thereof

A semiconductor and compound technology, applied in the field of vertical compound semiconductor structures, can solve problems such as limiting the integration density of three-dimensional integrated devices

Pending Publication Date: 2021-02-02
FRAUNHOFER GESELLSCHAFT ZUR FOERDERUNG DER ANGEWANDTEN FORSCHUNG EV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, in addition to the lateral dimensions of the through-substrate vias, the lateral extension of the device structure and its wiring substantially limits the achievable integration density of 3D integrated devices.

Method used

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  • Vertical compound semiconductor structure and manufacturing method thereof
  • Vertical compound semiconductor structure and manufacturing method thereof
  • Vertical compound semiconductor structure and manufacturing method thereof

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Embodiment Construction

[0033] Hereinafter, embodiments will be described in more detail with reference to the accompanying drawings, in which elements having the same or similar functions have the same reference numerals.

[0034] Method steps shown in the block diagrams and discussed with reference to the block diagrams may also be performed in any other order, in the order shown or described. Furthermore, method steps relating to a particular feature of the device may be interchanged with exactly that feature of the device, and vice versa.

[0035] figure 1 A schematic cross-sectional view of a vertical compound semiconductor structure 100 of the present invention is shown. The vertical compound semiconductor structure 100 includes a substrate 10 having a main surface 11 and an opposite second main surface 12 .

[0036] The vertical passage opening 13 extends completely through the substrate 10 between the first main surface 11 and the second main surface 12 . The layer stack 20 is arranged wit...

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Abstract

The invention relates to a vertical compound semiconductor structure (100) having: a substrate (10) having a first main surface (11) and an opposite second main surface (12); a vertical channel opening (13) extending completely through the substrate (10) between the first main surface (11) and the second main surface (12); and a layer stack (20) arranged within the vertical channel opening (13). The layer stack (20) comprises an electrically conductive layer (31) arranged within the vertical channel opening (13) and a compound semiconductor layer (21) arranged within the vertical channel opening (13). The compound semiconductor layer (21) includes a compound semiconductor layer arranged on the conductive layer (31) and galvanically connected to the conductive layer (31). The invention further relates to a method for producing such a vertical compound semiconductor structure (100).

Description

technical field [0001] The invention relates to a vertical compound semiconductor structure having at least one vertical channel opening and a layer stack integrated therein, the layer stack comprising at least one compound semiconductor layer, and to a three-dimensional compound semiconductor structure having such a vertical compound semiconductor structure A semiconductor device and a method for fabricating such a vertical compound semiconductor structure. Background technique [0002] The invention can be used particularly advantageously in the field of 3D system integration. Three-dimensional integration is the vertical connection (mechanical and electrical) of devices fabricated by planar technology. The latter are also referred to as two-dimensional or 2D systems, since the circuit structures are arranged in a horizontal two-dimensional plane (also referred to as the horizontal main substrate plane). At least two two-dimensional systems fabricated in conventional pla...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/06H01L29/732H01L29/861H01L21/34
CPCH01L29/8613H01L29/7325H01L29/66969H01L29/0684B82Y10/00H01L29/861H01L29/41708H01L29/42304H01L29/0665B82Y40/00H01L29/0657H01L29/735H01L29/66265H01L29/24H01L24/16H01L24/13H01L2224/16503H01L2224/16507H01L2224/05647H01L2224/81447H01L24/05H01L2224/16148H01L2224/13111H01L2224/13147H01L2224/02335H01L2224/05005H01L2224/05016H01L2224/05008H01L2224/05569H01L2224/16258H01L24/02H01L2224/0235H01L2224/0401H01L23/481H01L23/49562H01L2924/00014H01L2924/01029H01L2924/00012H01L29/732H01L29/66272H01L29/0804H01L29/0821H01L29/1004H01L29/12H01L21/76898H01L21/02568
Inventor 彼得·拉姆阿明·克隆普
Owner FRAUNHOFER GESELLSCHAFT ZUR FOERDERUNG DER ANGEWANDTEN FORSCHUNG EV
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