An infrared scene conversion chip with a dual-scale superstructure
A technology for infrared scenes and conversion chips, applied in photometry, optical radiation measurement, instruments, etc., can solve problems such as limited effective radiation efficiency
Active Publication Date: 2021-12-17
BEIJING INSTITUTE OF TECHNOLOGYGY
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Problems solved by technology
[0004] The purpose of the present invention is to solve the problem that the effective radiation efficiency of the existing infrared scene conversion chip is limited, and to provide an infrared scene conversion chip with a dual-scale superstructure; the chip adopts two different scale superstructures to make it It has high absorption in the writing light band and high radiation in the working band, so as to realize the efficient conversion of absorbed light into radiated light
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Embodiment 1
[0027] In the embodiment, the wavelength band of the writing light is set to 400nm to 1000nm, and the wavelength band of infrared radiation is set to 7.7 to 9.5 μm (the general band of long-wave infrared cooling imaging equipment).
[0028] like figure 1 As shown, an infrared scene conversion chip with a dual-scale superstructure is composed of three parts: the top 1 is the writing light superstructure layer; the middle 2 is the infrared band superstructure layer; the bottom 3 is the temperature control substrate.
[0029] like figure 2 As shown, the writing optical superstructure layer includes: an upper metal layer 1 , an intermediate dielectric layer 2 and a bottom metal substrate 3 . The above-mentioned upper metal layer 1, intermediate dielectric layer 2 and bottom metal substrate 3 constitute a metal-medium-metal subwavelength structural unit, and the period of the metal-dielectric-metal subwavelength structural unit is 250nm.
[0030] Preferably, the material of the...
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Abstract
The invention relates to an infrared scene conversion chip with a double-scale superstructure, and belongs to the field of infrared technology. The invention discloses an infrared scene conversion chip with a dual-scale superstructure, which is composed of a writing light high absorption superstructure layer and an infrared band high radiation superstructure layer. The writing light high absorption superstructure layer is stacked above the infrared waveband high radiation superstructure layer; the writing light waveband absorber superstructure is evenly arranged on the top unit cell of the large-scale infrared waveband radiation superstructure. The cell size has an order of magnitude difference, so they do not affect each other, and can achieve high absorption in the writing optical band and high emission in the infrared band at the same time. The present invention can realize writing in a specific wavelength band and radiation in a specific wavelength band. At the same time, due to the periodic characteristics of the working unit, each working unit can be regarded as a pixel to realize infrared scene conversion.
Description
technical field [0001] The invention relates to an infrared scene conversion chip with a double-scale superstructure, belonging to the field of infrared technology. Background technique [0002] The infrared scene generator is used to generate dynamic infrared scenes. During the development and use of infrared imaging detection equipment, its detection performance can be fully tested under laboratory conditions, thereby greatly reducing the development cost and development cycle. The infrared scene generation chip is the key device in the infrared scene generator. At present, commonly used infrared scene generation chips include microlens arrays (Wang Tengfei, Chen Yonghe, Fu Yutian. Infrared light field relay imaging system based on microscene arrays [J]. Infrared and Laser Engineering, Vol. 49, No. 7), silicon Liquid crystal on silicon (Liang Yuhua, Zhu Zhangming. Liquid crystal on silicon (LCoS) microdisplay technology [J]. Micro-nano electronics and intelligent manufact...
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IPC IPC(8): G01J5/44G01J5/00G01J1/00
CPCG01J5/44G01J5/00G01J1/00G01J2005/0077
Inventor 王欣王璐李卓杨苏辉
Owner BEIJING INSTITUTE OF TECHNOLOGYGY