Infrared scene conversion chip with dual-scale superstructure
An infrared scene, conversion chip technology, applied in photometry, measuring devices, instruments, etc., can solve problems such as limited effective radiation efficiency
Active Publication Date: 2021-02-05
BEIJING INSTITUTE OF TECHNOLOGYGY
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Problems solved by technology
[0004] The purpose of the present invention is to solve the problem that the effective radiation efficiency of the existing infrared scene conversion chip is limited, and to provide an infrared scene conversion chip with a dual-scale superstructure; the chip adopts two different scale superstructures to make it It has high absorption in the writing light band and high radiation in the working band, so as to realize the efficient conversion of absorbed light into radiated light
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Embodiment 1
[0027] In the embodiment, the wavelength band of the writing light is set to 400nm to 1000nm, and the wavelength band of infrared radiation is set to 7.7 to 9.5 μm (the general band of long-wave infrared cooling imaging equipment).
[0028] Such as figure 1 As shown, an infrared scene conversion chip with a dual-scale superstructure is composed of three parts: the top 1 is the writing light superstructure layer; the middle 2 is the infrared band superstructure layer; the bottom 3 is the temperature control substrate.
[0029] Such as figure 2 As shown, the writing optical superstructure layer includes: an upper metal layer 1 , an intermediate dielectric layer 2 and a bottom metal substrate 3 . The above-mentioned upper metal layer 1, intermediate dielectric layer 2 and bottom metal substrate 3 constitute a metal-dielectric-metal subwavelength structural unit, and the period of the metal-dielectric-metal subwavelength structural unit is 250nm.
[0030] Preferably, the mater...
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Abstract
The invention relates to an infrared scene conversion chip with a dual-scale superstructure, and belongs to the technical field of infrared. The invention discloses an infrared scene conversion chip with a dual-scale superstructure. The infrared scene conversion chip is composed of a write-in light high-absorption superstructure layer and an infrared band high-radiation superstructure layer. The write-in light high-absorption superstructure layer is stacked above the infrared band high-radiation superstructure layer; write-in optical band absorber superstructures are uniformly arranged on top-layer unit cells of a large-size infrared band radiation superstructure, and the unit sizes of the two are different in order of magnitudes, so that the two do not influence each other, and the high absorption of write-in optical bands and the high emission of infrared bands can be realized simultaneously. According to the invention, specific waveband write-in and specific waveband radiation can be realized. Meanwhile, due to the periodic characteristics of the working units, each working unit can be regarded as a pixel, and the infrared scene conversion is achieved.
Description
technical field [0001] The invention relates to an infrared scene conversion chip with a double-scale superstructure, belonging to the field of infrared technology. Background technique [0002] The infrared scene generator is used to generate dynamic infrared scenes. During the development and use of infrared imaging detection equipment, its detection performance can be fully tested under laboratory conditions, thereby greatly reducing the development cost and development cycle. The infrared scene generation chip is the key device in the infrared scene generator. At present, commonly used infrared scene generation chips include microlens arrays (Wang Tengfei, Chen Yonghe, Fu Yutian. Infrared light field relay imaging system based on microscene arrays [J]. Infrared and Laser Engineering, Vol. 49, No. 7), silicon Liquid crystal on silicon (Liang Yuhua, Zhu Zhangming. Liquid crystal on silicon (LCoS) microdisplay technology [J]. Micro-nano electronics and intelligent manufact...
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IPC IPC(8): G01J5/44G01J5/00G01J1/00
CPCG01J5/44G01J5/00G01J1/00G01J2005/0077
Inventor 王欣王璐李卓杨苏辉
Owner BEIJING INSTITUTE OF TECHNOLOGYGY