Seed Attachment Method
A technology of crystal seed and protective film, applied in chemical instruments and methods, single crystal growth, single crystal growth, etc., can solve problems such as difficult to prevent pollution, quality reduction, pollution, etc., and achieve the effect of improving growth stability and quality
Active Publication Date: 2022-08-05
セニック·インコーポレイテッド
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Problems solved by technology
However, if the adhesive is applied to one side of the seed crystal in this way, the other side of the seed crystal may be contaminated due to excessive application amount or the rotational force generated during the application, that is, the ingot may grow. The other side of the seed crystal is contaminated
Therefore, there is a problem that when the silicon carbide single crystal ingot is grown, the quality is lowered
[0004] As an example, Korea Granted Patent No. 1101983 discloses a seed crystal attached by an adhesive on one side of a graphite sheet and a seed crystal holder attached by an adhesive on the other side of the above-mentioned graphite sheet, although this can effectively prevent the seed crystal from contact with the graphite sheet. Discontinuity defects between seed holders, but difficult to prevent from contaminating the side of the seed that grows the ingot
Method used
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Embodiment
[0081] A polyester film (SKC product) having a thickness of about 100 μm as a protective film was attached to one side of the seed crystal grown in the ingot.
[0082] Liquid phenolic resin (KC-5536, Jiangnan Chemical Co., Ltd.) as a thermosetting resin and scaly graphite (purity 80 to 99%, D50, 2.5 μm) as a carbon-based substance were mixed at a weight ratio of 7:3 to form a mixture , after mixing 3 parts by weight of a wetting dispersant and a defoaming agent with respect to 100 parts by weight of the above-mentioned mixture, the adhesive bond is obtained by dispersion. The above-mentioned adhesive composition was applied on the other side of the above-mentioned seed crystal by spin coating to obtain a coating film having a thickness of 0.5 μm. The coated seed crystals were cured for 40 minutes at a temperature of 100°C. After the protective film was removed from the coated surface of the seed crystal, curing was performed at a temperature of 250° C. for 40 minutes.
[008...
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Abstract
Embodiments of the present invention relate to a method for attaching seed crystals, comprising: step (1), attaching a protective film to one side of the seed crystal grown in the ingot; step (2), coating the other side of the seed crystal with a bonding composition; step (3), performing the first curing, that is, performing heat treatment on the above-mentioned seed crystal; step (4), removing the above-mentioned protective film; step (5), performing the second curing, that is, performing heat treatment on the above-mentioned seed crystal; and step (6) , so that the above-mentioned seed crystal is attached to the seed crystal support, so that the growth stability and quality can be improved during the growth of the silicon carbide single crystal ingot.
Description
technical field [0001] Embodiments of the present invention relate to seed attachment methods that can improve growth stability and quality when growing a silicon carbide (SiC) single crystal ingot. Background technique [0002] Silicon carbide (SiC) has excellent heat resistance, mechanical strength, and radiation resistance, and has the advantage of being able to be produced on large-diameter substrates, and is being actively researched as a substrate for next-generation power semiconductor devices. In particular, single crystal SiC (single crystal SiC) has a large energy band gap, and has excellent maximum breakdown field voltage and thermal conductivity ( thermal conductivity). In addition, the carrier mobility of single-crystal silicon carbide is comparable to that of silicon, and the saturation drift velocity and withstand voltage of electrons are also large. Therefore, single-crystal hydrocarbons are suitable for semiconductor devices that require high power, high e...
Claims
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IPC IPC(8): C30B23/00C30B29/36
CPCC30B23/00C30B29/36C30B23/02C30B23/025C30B23/063
Inventor 高上基金政圭张炳圭具甲烈崔正宇
Owner セニック·インコーポレイテッド