Amorphous molybdenum disulfide flexible pressure sensor and preparation method thereof

A pressure sensor, molybdenum disulfide technology, applied in the field of sensors, can solve the problems of low degree of peeling, difficulty in mass production, low output, etc., and achieve the effects of multi-scale preparation, significant resistance change, and excellent output performance.

Active Publication Date: 2022-02-11
XI AN JIAOTONG UNIV
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] Two-dimensional MoS 2 The preparation methods include micromechanical exfoliation, chemical vapor deposition, liquid-phase ultrasonic exfoliation, and hydrothermal methods. Although these methods can obtain two-dimensional MoS 2 , but it has limitations such as low yield, poor repeatability, low degree of exfoliation, and harsh preparation conditions. The currently recorded MoS 2 Piezoresistive pressure sensors are mostly prepared by these methods, and it is difficult to achieve mass production

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Amorphous molybdenum disulfide flexible pressure sensor and preparation method thereof
  • Amorphous molybdenum disulfide flexible pressure sensor and preparation method thereof
  • Amorphous molybdenum disulfide flexible pressure sensor and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0036] A kind of amorphous MoS of the embodiment of the present invention 2 Ultra-thin high-performance flexible pressure sensor, including: flexible substrate 1; flexible substrate 1 is sputtered with electrodes 2 and amorphous molybdenum disulfide film 3 through MEMS technology, and an organic insulating film 4 is printed on the surface of the sensitive element and electrode . Among them, the amorphous molybdenum disulfide film constitutes MoS 2 piezoresistive sensitive element.

[0037] Amorphous MoS prepared by processes such as magnetron sputtering or electron beam evaporation of the present invention 2 Ultrathin high-performance flexible pressure sensor, first discovered amorphous MoS 2 It has a good piezoresistive effect, and can realize the measurement of tiny pressure on an ultra-thin flexible substrate; the flexible function of the sensor is realized through the flexible substrate. The amorphous MoS 2 The ultra-thin and high-performance flexible pressure sensor ...

Embodiment 2

[0040] see figure 1 , the difference between the embodiment of the present invention and embodiment 1 is only that the MoS composed of the amorphous molybdenum disulfide thin film 3 2 Each unit in the piezoresistive sensitive element has a size of 1 mm×1 mm and a thickness of 1 μm. The sensitive element is an array structure, using MoS 2 The target is sputtered.

Embodiment 3

[0042] The difference between the embodiment of the present invention and embodiment 1 is that the flexible substrate 1 is made of polydimethylsiloxane (PDMS) or polyimide (PI), with a thickness of 100-500 μm. This is due to the good stretchability and flexibility of polydimethylsiloxane (PDMS), and the strong bending performance and good chemical stability of polyimide (PI). At the same time, PDMS and PI have good combination with electrons and are widely used in flexible electronics.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to view more

Abstract

The invention discloses an amorphous molybdenum disulfide flexible pressure sensor and a preparation method thereof. The amorphous molybdenum disulfide flexible pressure sensor comprises: a flexible base, on which electrodes and several amorphous Molybdenum disulfide thin film; the electrode is in contact with the amorphous molybdenum disulfide thin film; wherein, the plurality of amorphous molybdenum disulfide thin films constitute a pressure sensitive element. The preparation method of the present invention has simple process, easy operation and control, MoS 2 The film deposition rate is high, the film formation is dense and uniform, and it is easy to produce in large quantities; the prepared MoS 2 After the film is pressed, the resistance value changes significantly, and changes regularly with the change of pressure, and the output performance is excellent. The flexible pressure sensor prepared based on the piezoresistive film has a wide range, ultra-sensitive, soft and easy to deform, and is suitable for multi-scale measurement and other advantages.

Description

technical field [0001] The invention belongs to the technical field of sensors, in particular to an amorphous molybdenum disulfide flexible pressure sensor and a preparation method thereof. Background technique [0002] Molybdenum disulfide (MoS 2 ), as a transition metal dichalcogenide material, has attracted the attention of researchers at home and abroad in recent years due to its excellent electrical and optical properties and unusual specific surface area. In 2011, the Andras Kis research team at the Swiss Federal Institute of Technology used only 0.65nm MoS 2 The first batch of transistors produced by a single-layer sheet is expected to re-promote Moore's Law; until 2014, two-dimensional MoS 2 Researches on piezoresistive materials have also been carried out gradually. [0003] Given atomic layer thickness of MoS 2 With high Young's modulus and fracture strength, the AndrasKis research team mechanically exfoliated 1-3 layers of MoS 2 Fabricated into NEMS strain se...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Patents(China)
IPC IPC(8): G01L1/18
CPCG01L1/18
Inventor 赵玉龙庞星张琪赵星越
Owner XI AN JIAOTONG UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products