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Double-antenna enhanced linear microwave plasma source

A microwave plasma and dual-antenna technology, applied in the direction of plasma, electrical components, etc., can solve the problems of high equipment cost and expensive microwave power supply, and achieve the effect of reducing the quantity and increasing the lateral area

Pending Publication Date: 2021-04-06
CENT SOUTH UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

In fact, the microwave power supply is extremely expensive, accounting for the bulk of the equipment cost

Method used

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  • Double-antenna enhanced linear microwave plasma source
  • Double-antenna enhanced linear microwave plasma source

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Embodiment Construction

[0027] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0028] In order to make the above objects, features and advantages of the present invention more comprehensible, the present invention will be further described in detail below in conjunction with the accompanying drawings and specific embodiments.

[0029] The present invention provides a dual-antenna enhanced linear microwave plasma source, comprising a shielding case 3, a carrier plate 10, a microwave power supply and a T-shaped power divider 7 connected to ...

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Abstract

The invention discloses a double-antenna enhanced linear microwave plasma source, which comprises a shielding case, a carrier plate, a microwave power supply and a T-shaped power divider communicated with the microwave power supply, the shielding case is of a trapezoidal structure and is not provided with a bottom plate; the carrier plate is arranged right below the shielding case; the other two ends of the T-shaped power divider are respectively communicated with a microwave antenna, and the two microwave antennas are positioned on the same side; the T-shaped power divider and the microwave antenna are arranged in the middle of the inner cavity of the shielding case; and the shielding case is also provided with a magnet assembly and an air inlet pipe group. According to the invention, a double-antenna structure is introduced on the basis of an existing linear microwave plasma source, an air inlet pipeline and a magnetic field structure are correspondingly improved, the transverse area of plasmas generated by the linear microwave plasma source is effectively increased, and therefore the purpose of reducing the number of microwave power sources is finally achieved.

Description

technical field [0001] The invention relates to the field of plasma generating devices, in particular to a double-antenna enhanced linear microwave plasma source. Background technique [0002] With the rapid development of low-temperature plasma technology in the fields of large-scale integrated circuits, solar cells, plasma display devices, diamond-like carbon and pure diamond films, the industry urgently needs a low-pressure high-density, large-area uniform and Stable plasma generation technology. Therefore, in recent years, relevant researchers at home and abroad have proposed many new plasma sources, among which the linear microwave plasma source has many unique advantages: the structure is relatively simple, and there is no problem of impurity pollution caused by electrode insertion; the use of microwave (2.45GHz ) excitation can obtain higher plasma density; because the linear structure only needs to ensure plasma uniformity in the axial direction, a large area of ​​u...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H05H1/46
CPCH05H1/46
Inventor 周继承徐伟黄静廖佳冯天舒
Owner CENT SOUTH UNIV
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