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Solid-state imaging element

A solid-state image and sensor technology, applied in image communication, semiconductor/solid-state device manufacturing, electrical solid-state devices, etc., can solve problems such as inability to fully realize noise control

Pending Publication Date: 2021-04-09
SONY SEMICON SOLUTIONS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] As disclosed in Patent Document 1, there is a problem that even if the leakage (noise) to the memory is reduced by suppressing the back gate of the sampling transistor constituting the pixel and the analog storage reset transistor, the effect of noise control cannot be sufficiently achieved

Method used

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Experimental program
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Effect test

no. 1 approach

[0060] will use Figure 2 to Figure 18 A solid-state image sensor according to the first embodiment of the present technology will be described. figure 2 is a cross-sectional view of one pixel among a plurality of pixels provided in the solid-state image sensor according to the present embodiment. Note that in figure 2 In , for easy understanding, the light incident side is shown on the lower side.

[0061] Such as figure 2 As shown, the solid-state image device according to the present embodiment includes a first substrate 1 including a photoelectric conversion unit 11, a transfer gate unit 12G connected to the photoelectric conversion unit 11, a floating diffusion (hereinafter, abbreviated as “FD”) unit 13 and an interlayer insulating film (an example of an insulating film) 14 covering the photoelectric conversion unit 11 , the transfer gate unit 12G, and the FD unit 13 . The photoelectric conversion unit 11 includes a photodiode formed of, for example, N-type silicon...

no. 2 approach

[0122] will refer to Figure 19 to Figure 22 A solid-state image sensor according to a second embodiment of the present technology will be described. Note that constituent elements exhibiting the same effects and functions as those of the above-described solid-state image sensor IS1 according to the first embodiment will be denoted by the same reference numerals, and descriptions thereof will be omitted.

[0123] (Schematic configuration of one pixel of a solid-state image sensor)

[0124] First, refer to Figure 19 A schematic configuration of one pixel of the solid-state image sensor IS2 according to the present embodiment will be described. Note that in Figure 20 In , the circuit configuration of one pixel P among the plurality of pixels is shown. In addition, in Figure 20 In , the reference numerals of the gate unit, the source unit and the drain unit of the transistor are represented by “G”, “S” and “D”, respectively. In addition, the reference numerals of the fro...

no. 3 approach

[0134] will use Figure 23 to Figure 26 A solid-state image sensor according to a third embodiment of the present technology will be described. Note that constituent elements exhibiting the same effects and functions as those of the above-described solid-state image sensor IS1 according to the first embodiment will be denoted by the same reference numerals, and descriptions thereof will be omitted.

[0135] (Schematic configuration of one pixel of a solid-state image sensor)

[0136] First, refer to Figure 23 to Figure 25 A schematic configuration of one pixel of the solid-state image sensor IS3 according to the present embodiment will be described. Note that in Figure 24 In , the circuit configuration of one pixel P among the plurality of pixels is shown. In addition, in Figure 24 In , the reference numerals of the gate unit, the source unit and the drain unit of the transistor are represented by “G”, “S” and “D”, respectively. In addition, the reference numerals of ...

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Abstract

The purpose of the present technology is to provide a solid-state imaging element which is capable of reducing display unevenness of a captured image. The solid-state imaging element according to the present technology is provided with a first substrate which comprises a photoelectric conversion part, a transfer gate part that is connected to the photoelectric conversion part, an FD part that is connected to the transfer gate part, and an interlayer insulating film that covers the photoelectric conversion part, the transfer gate part and the FD part; and a second substrate which is arranged so as to be adjacent to the interlayer insulating film, and comprises an amplifier transistor that has a back gate part, while constituting a part of a pixel transistor that is connected to the FD part, with the interlayer insulating film being interposed therebetween.

Description

technical field [0001] The present technology relates to a solid-state image sensor. Background technique [0002] Patent Document 1 discloses a solid-state image sensor capable of reducing noise caused by leakage current. [0003] Citation list [0004] patent documents [0005] Patent Document 1: Japanese Patent Application Laid-Open No. 2014-41972 Contents of the invention [0006] The technical problem to be solved by the invention [0007] As disclosed in Patent Document 1, there is a problem that even if leakage (noise) to memory is reduced by suppressing back gates of sampling transistors and analog memory reset transistors constituting pixels, the effect of noise control cannot be sufficiently achieved. [0008] An object of the present technology is to provide a solid-state image sensor capable of reducing display unevenness of captured images. [0009] Solutions to technical problems [0010] To achieve the above object, a solid-state image sensor according...

Claims

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Application Information

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IPC IPC(8): H01L27/146H01L21/336H01L27/00H01L29/78H04N5/369H04N5/374
CPCH01L29/78H01L27/00H01L27/14634H01L27/14636H01L27/1464H01L27/14638H01L27/14614H04N25/616H04N25/772H04N25/79H01L27/14612H01L29/78645H04N25/76H01L27/14603H01L27/14621H01L27/14643H01L27/14831H04N25/60
Inventor 野本和生
Owner SONY SEMICON SOLUTIONS CORP