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An electromigration test method, device, equipment and storage medium

A test method and electromigration technology, which is applied in the direction of measuring devices, electronic circuit testing, and measuring electricity, can solve the problems of failing to consider the actual situation of link structure electromigration, shortening the service life of circuits, etc.

Active Publication Date: 2022-05-03
上海燧原智能科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

If electromigration effects are not considered in the package design, the lifetime of the circuit in which it is used can be significantly reduced
[0003] The electromigration test in the related art usually only performs the electromigration test on the local structure of the circuit, such as a certain semiconductor device, and fails to consider the actual situation of the electromigration of the entire link structure of each link in the chip.

Method used

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  • An electromigration test method, device, equipment and storage medium
  • An electromigration test method, device, equipment and storage medium
  • An electromigration test method, device, equipment and storage medium

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0028] Figure 1A It is a flow chart of an electromigration testing method provided in Embodiment 1 of the present invention. The embodiments of the present invention are applicable to the case of electromigration testing. The method can be executed by the electromigration testing device provided by the embodiment of the present invention, which can be implemented in the form of software and / or hardware, and can generally be integrated into computer equipment. like Figure 1A As shown, the method of the embodiment of the present invention specifically includes:

[0029] Step 101. Determine the standard resistance of the link to be tested according to the simulation model of the link to be tested in the chip.

[0030] In the embodiment of the present invention, the link to be tested is any link in the chip that needs to be tested for electromigration. A chip may contain multiple circuit blocks. Each circuit module is used to realize different functions. A link in a chip is ...

Embodiment 2

[0083] figure 2 It is a flow chart of an electromigration testing method provided in Embodiment 2 of the present invention. The embodiments of the present invention may be combined with various optional solutions in the foregoing one or more embodiments. like figure 2 As shown, the method of the embodiment of the present invention specifically includes:

[0084] Step 201. Establish a simulation model of the link to be tested according to the parameter information of the link to be tested in the chip.

[0085] The parameter information of the link to be tested is parameter information associated with the link structure of the link to be tested. The parameter information of the link to be tested includes, but is not limited to: a circuit diagram of the link to be tested, and device parameters of each electronic component in the link to be tested. According to the parameter information of the link to be tested in the chip, the link to be tested is simulated to obtain a simu...

Embodiment 3

[0110] image 3It is a schematic structural diagram of an electromigration testing device provided in Embodiment 3 of the present invention. like image 3 As shown, the device can be configured in computer equipment, including: a standard resistance determination module 301 , a calculation formula determination module 302 , a test condition determination module 303 , a sample test module 304 and a test result determination module 305 .

[0111] Among them, the standard resistance determination module 301 is used to determine the standard resistance of the link to be tested according to the simulation model of the link to be tested in the chip; the calculation formula determination module 302 is used to simulate according to the preset multiple groups of electromigration Test conditions Carry out the electromigration simulation test on the simulation model of the link to be tested, and determine the failure time calculation formula of the link to be tested according to multipl...

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Abstract

The embodiment of the invention discloses an electromigration test method, device, equipment and storage medium. Wherein, the method includes: according to the simulation model of the link to be tested in the chip, determining the standard resistance of the link to be tested; determining the failure time calculation formula of the link to be tested according to multiple sets of simulation test data in the electromigration simulation test process ; Determine the multiple groups of electromigration test conditions corresponding to the links to be tested; control the electromigration test system to perform electromigration tests on the electromigration test samples corresponding to the links to be tested, and obtain test samples corresponding to each group of electromigration test conditions Failure time: According to the comparison result of the expected failure time in each group of electromigration test conditions and the failure time of the corresponding test sample, determine the electromigration test result of the link to be tested. In the embodiment of the present invention, the electromigration test can be performed on the links in the chip, and the actual situation of the electromigration of the entire link structure of each link in the chip can be determined.

Description

technical field [0001] Embodiments of the present invention relate to software debugging technology, and in particular to an electromigration test method, device, equipment and storage medium. Background technique [0002] Electromigration is a metal migration phenomenon produced by metal wires under the action of current and temperature. The moving electrons exchange momentum with the main metal lattice. When metal atoms migrate along the direction of electron flow, holes will be formed in the original position. At the same time, mound-like protrusions are formed in the migration and accumulation of metal atoms. The former will open or break the leads, while the latter will cause difficulties in photolithography and short circuits between multi-layer wiring, thus affecting the normal operation of the chip. Electromigration is important in designing for reliability using semiconductors with higher DC densities and temperatures. As chip power densities increase further, the...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01R31/28
CPCG01R31/2858G01R31/2874
Inventor 尹鹏跃张水英
Owner 上海燧原智能科技有限公司