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Method, system and storage medium for capacitor hole tilt detection and feedback

A tilt detection, capacitive hole technology, applied in circuits, electrical components, electrical solid devices, etc., can solve the problems of unavailability of wafer structure, destruction of wafer structure, and wafer waste.

Active Publication Date: 2022-04-26
CHANGXIN MEMORY TECH INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] However, the inventors have found that the current method of detecting the inclination angle of the capacitor hole on the wafer through the splitting method will destroy the wafer structure, making the wafer structure unusable, resulting in waste of the wafer

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  • Method, system and storage medium for capacitor hole tilt detection and feedback
  • Method, system and storage medium for capacitor hole tilt detection and feedback
  • Method, system and storage medium for capacitor hole tilt detection and feedback

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Embodiment Construction

[0031] In order to make the purpose, technical solutions and advantages of the embodiments of the present invention more clear, various implementation modes of the present invention will be described in detail below in conjunction with the accompanying drawings. However, those of ordinary skill in the art can understand that, in each implementation manner of the present invention, many technical details are provided for readers to better understand the present application. However, even without these technical details and various changes and modifications based on the following implementation modes, the technical solution claimed in this application can also be realized.

[0032] The first embodiment of the present invention relates to a method for detection and feedback of capacitance hole inclination. The core of this embodiment is to include: selecting a region to be detected on the wafer to be tested, and the region to be detected on the wafer to be tested includes capacita...

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Abstract

The invention relates to the technical field of semiconductors, and discloses a method for detecting and feeding back the inclination of a capacitor hole, comprising: selecting a region to be detected on a wafer to be tested, and the region to be detected on the wafer to be tested includes capacitor holes; A scanned image of the capacitive hole in the area; the inclination angle of the capacitive hole is determined from the scanned image. The method, system, and storage medium for tilt detection and feedback of capacitor holes provided in the present invention can realize non-destructive online detection of the tilt angle of capacitor holes on a wafer, and avoid waste of wafers.

Description

technical field [0001] The embodiments of the present invention relate to the technical field of semiconductors, and in particular to a method, system and storage medium for detecting and feeding back the inclination of a capacitance hole. Background technique [0002] With the continuous development of dynamic random access memory (Dynamic Random Access Memory, DRAM) technology, the performance requirements for capacitors in DRAM are also getting higher and higher. In the DRAM process below 20nm, DRAM adopts a stacked capacitor structure. The capacitor (Capacitor) is a cylindrical shape with a high aspect ratio. How to prepare a capacitor with a large enough capacitance and high reliability has become an important issue in the prior art. A common method is to increase the aspect ratio of the capacitor in DRAM. , the size of capacitors keeps shrinking and their heights keep increasing. [0003] When etching the high-aspect-ratio columnar capacitor structure on the wafer to ...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/66H01L21/8242
CPCH01L22/12H01L22/20H10B12/03
Inventor 李君才
Owner CHANGXIN MEMORY TECH INC