Radio frequency switch and radio frequency communication system thereof

Abstract

The invention discloses a radio frequency switch and a radio frequency communication system thereof, and the radio frequency switch comprises N switching tubes which are connected in series, wherein a first access end of the switching tube Qi is connected with a second access end of the switching tube Q, a second access end of the switching tube Qi is connected with a first access end of the switching tube Q, a first access end of the switching tube Q1 is used as an output end of the radio frequency switch, the second access end of the switch tube QN is used as the input end of the radio frequency switch, N is an integer and is greater than 1, i is less than N, and i is an integer; the withstand voltage value of the switching tube close to the output end is smaller than or equal to the withstand voltage value of the switching tube close to the input end, and the withstand voltage value of the switching tube Q1 is different from the withstand voltage value of the switching tube QN. According to the radio frequency switch, the withstand voltage values of the switch tubes in the radio frequency switch are set in a differentiated manner to match the voltage division conditions of the switch tubes influenced by the parasitic effect in the radio frequency switch, so that the withstand voltage capability of the radio frequency switch is basically not influenced by the parasitic effect.

Description

technical field [0001] The present invention relates to the technical field of electronic power, and more specifically, to a radio frequency switch and a radio frequency communication system thereof. Background technique [0002] With the popularity of portable digital products, in the communication system, the proportion of radio frequency chips is getting higher and higher. Among them, RF switches are widely used in RF channel switching, impedance matching, antenna tuning, aperture tuning and other fields. In different application backgrounds, switches need to withstand RF voltages ranging from a few volts to hundreds of volts. [0003] However, in a high-frequency environment, the RF switch is affected by parasitic effects, and its terminals will exhibit the characteristics of parasitic capacitance, so that the increase in equivalent value cannot be ignored, and the parasitic capacitance will adversely affect the performance of the RF switch. Contents of the invention ...

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Problems solved by technology

[0003] However, in a high-frequency environment, the RF switch is affected by parasitic effects, and its terminals will exhibit parasitic capacitance characteristics, so that the increase in equivalent value cannot be ignored, and the parasitic capacitance will adversely affect the performance of the RF switch.

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