Nonvolatile memory devices and methods of fabricating the same

Abstract

Provided are a nonvolatile memory device and a method of fabricating the same in which a channel length is effectively increased and high-integration may be possible. In the nonvolatile memory device, a semiconductor device may include an active region defined by a device isolation film. The active region may include at least one projecting portion. A pair of control gate electrodes may cover both side surfaces of the at least one projecting portion, and may be spaced apart from each other. A pair of charge storage layers may be between both side surfaces of the at least one projecting portion and the pair of control gate electrodes.

Description

technical field [0001] Example embodiments relate to a semiconductor device and a method of manufacturing the same. Other example embodiments relate to a nonvolatile memory device storing data using a charge storage layer and a method of manufacturing the same. Background technique [0002] As the integration level of nonvolatile memory devices (eg, flash memory devices) increases, the channel length of the nonvolatile memory devices decreases, resulting in short channel effects. For example, the off-current of the flash memory device increases due to the punch-through effect, and the threshold voltage of the flash memory device decreases. [0003] In order to suppress such a short channel effect, a method of increasing the impurity concentration in the body of the flash memory device may be used. However, such an increase in impurity concentration causes an increase in junction leakage current, which prevents or reduces channel voltage boosting. ...

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Problems solved by technology

Therefore, it can be difficult to control the amount of charge stored in a cell, and thus the control of the MLC operation scheme can become difficult

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