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Online irradiation creep sample stage based on wafer sample ejection technology

A sample stage and sample technology, applied in the direction of radiation measurement, X/γ/cosmic radiation measurement, material analysis using wave/particle radiation, etc., can solve the uneven tension of irradiated samples, the area and force of irradiated samples Problems such as area mismatch and long temperature response time, to achieve the effects of improving efficiency and beam utilization, light weight, and fast temperature response time

Active Publication Date: 2021-07-23
INST OF MODERN PHYSICS CHINESE ACADEMY OF SCI
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  • Claims
  • Application Information

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Problems solved by technology

[0003] However, in the traditional high-energy heavy ion irradiated creep experiment, there are disadvantages such as uneven tensile force on the irradiated sample, mismatch between the area of ​​the irradiated sample and the area under the force, and long temperature response time.

Method used

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  • Online irradiation creep sample stage based on wafer sample ejection technology
  • Online irradiation creep sample stage based on wafer sample ejection technology
  • Online irradiation creep sample stage based on wafer sample ejection technology

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Embodiment Construction

[0024] Preferred embodiments of the present invention will be described in detail below with reference to the accompanying drawings, so as to better understand the purpose, features and advantages of the present invention. It should be understood that the embodiments shown in the drawings are not intended to limit the scope of the present invention, but only to illustrate the essence of the technical solutions of the present invention.

[0025] Such as Figures 1 to 3 As shown, the online irradiation creep sample stage based on wafer sample ejection technology provided by the present invention includes a vacuum chamber 7, a stress loader 1 is connected to the bottom of the vacuum chamber 7, and the first side wall of the vacuum chamber 7 The first CF100 standard interface 13 is arranged on the top, and the second side wall of the vacuum chamber 7 is provided with a beam pipeline interface 4, and the position of the beam pipeline interface 4 corresponds to the position of the f...

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Abstract

The invention relates to an online irradiation creep sample stage based on a wafer sample ejection technology. The sample stage comprises a vacuum chamber, the bottom of the vacuum chamber is connected with a stress loader, the first side wall of the vacuum chamber is provided with a first CF100 standard interface, and the second side wall of the vacuum chamber is provided with a beam pipeline interface, the lower end of the stress loading bearing arm is connected with the stress loader, and the upper end is connected with the rear end of the stress transmission arm; a sample placing table is attached to a heating element, and a sample is positioned on the sample placing table; one end of a sample placing table bracket is connected with the heating element, and the other end of the sample placing table bracket is connected with the first CF100 standard interface; and the front end of the stress transmission arm sequentially penetrates through the heating element and the sample placing table to be in contact with the sample. According to the invention, the effective area of the sample is strong in flow and high in damage rate, useful data can be obtained by efficiently utilizing expensive accelerator machine hours, and particle irradiation damage of aircraft devices and neutron irradiation damage tests of nuclear materials can be quickly and accurately simulated.

Description

technical field [0001] The invention relates to the technical field of high-temperature irradiation devices under stress conditions, in particular to an on-line irradiation creep sample stage based on wafer sample ejection technology. Background technique [0002] Due to the advantages of heavy ions that can quickly introduce controllable defects in materials and cause large damage, the damage and defect accumulation involved in the life assessment of many aerospace devices and nuclear materials, compared with the damage and damage caused by space particles and neutrons Defects, heavy ions can be relatively easy and fast to introduce a controllable number of defects, and it is easy to realize various simulation tests; thus greatly improving people's ability to quickly and efficiently test and evaluate the performance of some materials under extreme conditions. [0003] However, in the traditional high-energy heavy-ion irradiated creep experiment, there are disadvantages such...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01N23/00G01T1/29
CPCG01N23/00G01T1/29
Inventor 宋银张宪龙张崇宏杨义涛缑洁丁兆楠
Owner INST OF MODERN PHYSICS CHINESE ACADEMY OF SCI