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Online Irradiation Creep Sample Stage Based on Wafer Sample Ejection Technology

A sample stage and sample technology, applied in radiation measurement, X/γ/cosmic radiation measurement, material analysis using wave/particle radiation, etc. Problems such as the mismatch between the sample area and the force-bearing area, to achieve the effect of improving efficiency and beam utilization, fast temperature response time, and light weight

Active Publication Date: 2022-01-14
INST OF MODERN PHYSICS CHINESE ACADEMY OF SCI
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Problems solved by technology

[0003] However, in the traditional high-energy heavy ion irradiated creep experiment, there are disadvantages such as uneven tensile force on the irradiated sample, mismatch between the area of ​​the irradiated sample and the area under the force, and long temperature response time.

Method used

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  • Online Irradiation Creep Sample Stage Based on Wafer Sample Ejection Technology
  • Online Irradiation Creep Sample Stage Based on Wafer Sample Ejection Technology
  • Online Irradiation Creep Sample Stage Based on Wafer Sample Ejection Technology

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Embodiment Construction

[0024] Preferred embodiments of the present invention will be described in detail below with reference to the accompanying drawings, so as to better understand the purpose, features and advantages of the present invention. It should be understood that the embodiments shown in the drawings are not intended to limit the scope of the present invention, but only to illustrate the essence of the technical solutions of the present invention.

[0025] Such as Figures 1 to 3 As shown, the online irradiation creep sample stage based on wafer sample ejection technology provided by the present invention includes a vacuum chamber 7, a stress loader 1 is connected to the bottom of the vacuum chamber 7, and the first side wall of the vacuum chamber 7 The first CF100 standard interface 13 is arranged on the top, and the second side wall of the vacuum chamber 7 is provided with a beam pipeline interface 4, and the position of the beam pipeline interface 4 corresponds to the position of the f...

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Abstract

The invention relates to an online irradiation creep sample stage based on wafer sample ejection technology, comprising a vacuum chamber, a stress loader is connected to the bottom of the vacuum chamber, and a first CF100 is arranged on the first side wall of the vacuum chamber Standard interface, the second side wall of the vacuum chamber is provided with a beam pipeline interface, wherein, the lower end of the stress load bearing arm is connected to the stress loader, and the upper end is connected to the rear end of the stress transmission arm; the sample placing table is connected to the heating element Fitting setting, the sample is positioned on the sample placement platform; one end of the sample placement platform bracket is connected to the heating element, and the other end is connected to the first CF100 standard interface; the front end of the stress transmission arm passes through the heating element and the sample placement platform in turn to connect with the sample touch. The invention can make the flow in the effective area of ​​the sample strong and the damage rate high, can efficiently use expensive accelerator machines to obtain useful data, and quickly and accurately simulate particle radiation damage of aviation devices and neutron radiation damage tests of nuclear materials.

Description

technical field [0001] The invention relates to the technical field of high-temperature irradiation devices under stress conditions, in particular to an on-line irradiation creep sample stage based on wafer sample ejection technology. Background technique [0002] Due to the advantages of heavy ions that can quickly introduce controllable defects in materials and cause large damage, the damage and defect accumulation involved in the life assessment of many aerospace devices and nuclear materials, compared with the damage and damage caused by space particles and neutrons Defects, heavy ions can be relatively easy and fast to introduce a controllable number of defects, and it is easy to realize various simulation tests; thus greatly improving people's ability to quickly and efficiently test and evaluate the performance of some materials under extreme conditions. [0003] However, in the traditional high-energy heavy-ion irradiated creep experiment, there are disadvantages such...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01N23/00G01T1/29
CPCG01N23/00G01T1/29
Inventor 宋银张宪龙张崇宏杨义涛缑洁丁兆楠
Owner INST OF MODERN PHYSICS CHINESE ACADEMY OF SCI