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Apparatuses and methods for multi-bank refresh timing

A kind of equipment and technology, which is applied in the field of semiconductor devices, can solve the problems such as the difficulty of timing the memory refresh cycle

Pending Publication Date: 2021-07-23
MICRON TECH INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

As the number of memory banks in traditional DRAM and in HBM increases, timing memory refresh cycles can become more difficult and / or require the inclusion of more memory components

Method used

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  • Apparatuses and methods for multi-bank refresh timing
  • Apparatuses and methods for multi-bank refresh timing
  • Apparatuses and methods for multi-bank refresh timing

Examples

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Embodiment Construction

[0015] The following description of certain embodiments is merely exemplary in nature and is in no way intended to limit the scope of the invention or its application or uses. In the following detailed description of embodiments of the present systems and methods, reference is made to the accompanying drawings which form a part hereof, and in which are shown by way of illustration specific embodiments in which the described systems and methods may be practiced. These embodiments are described in sufficient detail to enable those skilled in the art to practice the disclosed systems and methods, and it is to be understood that other embodiments may be utilized and structures may be made without departing from the spirit and scope of the invention. and logic changes. Also, for clarity purposes, detailed descriptions of specific features will not be set forth when they are apparent to those skilled in the art so as not to obscure the description of the embodiments of the invention...

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Abstract

Embodiments of the disclosure are drawn to apparatuses and methods for timing refresh operations in a memory device. An apparatus may include an oscillator that provides a periodic signal to one or more refresh timer circuits. Each of the refresh timer circuits is associated with a respective memory bank in the memory device. The refresh timer may include a counter block and a control logic block. The control logic block may gate the periodic signal to the counter block. The counter block may count the row active signal time and the row precharge time. The counter signals may be used by the control logic block to output a number of pumps of a refresh operation.

Description

Background technique [0001] The present invention relates generally to semiconductor devices, and more particularly to semiconductor memory devices. In particular, the present invention relates to volatile memory, such as dynamic random access memory (DRAM). DRAM can be included in high bandwidth memory (HBM). A HBM may include a stack of dies with one or more libraries on each die. [0002] Volatile memory requires periodic refresh of data in memory to preserve data. As the number of memory banks in traditional DRAM and in HBM increases, timing memory refresh cycles may become more difficult and / or require the inclusion of more memory components. Contents of the invention [0003] The apparatus and methods described herein can reduce die area dedicated to refresh timing components, reduce production time, and / or reduce test time. [0004] According to at least one example disclosed herein, an apparatus may include: a memory bank; an oscillator circuit configured to outp...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G11C11/406
CPCG11C11/40618G11C11/40611G11C5/025G11C5/063G11C5/04G11C2211/4065G11C11/4076G11C11/40603G11C11/40615G11C5/145G11C11/4091G11C8/10G11C11/4074
Inventor J·M·约翰逊C·G·维杜威特D·S·米勒Y·S·藤原
Owner MICRON TECH INC