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Process for producing layer with mixed solvent system

A technology of solvents and organic solvents, applied in the field of manufacturing semiconductor devices, can solve problems such as difficulty

Pending Publication Date: 2021-07-30
OXFORD UNIV INNOVATION LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, this is not easy to do because perovskite precursor materials are usually soluble in highly polar protic solvents, while organic materials are usually soluble in nonpolar solvents.

Method used

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  • Process for producing layer with mixed solvent system
  • Process for producing layer with mixed solvent system
  • Process for producing layer with mixed solvent system

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0165] Example 1: Solvents comprising toluene and butylamine

[0166] A solvent comprising a 50:50 v / v mixture of butylamine / toluene was prepared. PbI 2 and methylammonium iodide are dissolved in a mixed solvent to form a precursor composition. The precursor composition is then used to form perovskite thin films. figure 1 The current-voltage characteristics of devices including perovskite films deposited from mixed butylamine / toluene solvents are shown. figure 2 Absorption curves of perovskite films deposited from butylamine / toluene solvents are shown. Perovskites deposited from this butylamine / toluene solvent have MA n-1 BA 2 Pb n I 3n+1 Crystal structure.

Embodiment 2

[0167] Example 2: Solvents including Toluene, Butylamine and Methylamine

[0168] Preparation of precursor solution

[0169] Methyl ammonium iodide (Dyesol company) and PbI 2 (TCI Chemical Co.) was added to 3 ml of toluene to form a 1M solution. Sonicate the vial until a dark gray suspension is obtained. A solution of methylamine (MA) in ethanol (Sigma Aldrich, 33 wt%) was placed in an aerator kept in an ice bath. Carrier gas (N 2 ) to degas the MA solution. In direct bubbling including perovskite precursors (methylammonium iodide and PbI 2 ) in toluene (Sigma Aldrich), the generated MA gas was passed through a drying tube filled with desiccant (anhydrous calcium sulfate (Drierite) and CaO). Gas was bubbled through the dark gray dispersion for 5 minutes, after which 500 [mu]l of butylamine (Sigma Aldrich) was added to the dispersion. After the addition of butylamine, a clear yellow solution was obtained, after which toluene was added to the solution so that the final mo...

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Abstract

The present invention relates to a process for producing a layer of a crystalline A / M / X material, which crystalline A / M / X material comprises a compound of formula [A]a[M]b[X]c, wherein: [M] comprises one or more first cations, which one or more first cations are metal or metalloid cations; [A] comprises one or more second cations; [X] comprises one or more halide anions; a is an integer from 1 to 6; b is an integer from 1 to 6; and c is an integer from 1 to 18, wherein the process comprises disposing on a substrate a precursor composition comprising: (a) a first precursor compound comprising a first cation (M), which first cation is a metal or metalloid cation; and (b) a solvent, and wherein the solvent comprises: (i) a non- polar organic solvent which is a hydrocarbon solvent, a chlorohydrocarbon solvent or an ether solvent; and (ii) a first organic amine comprising at least three carbon atoms. Also described are compositions useful in the process of the invention.

Description

technical field [0001] The present invention relates to a method for manufacturing layers of crystalline A / M / X material. The present invention also relates to a method of manufacturing a semiconductor device, and a composition used in the above method. [0002] The work on this application was supported by funding under the Marie Sklodowska-Curie Grant Agreement No. 706552 under the EU Horizons 2020 Research and Innovation Framework Programme. The work on this application was supported by funding under the Marie Sklodowska-Curie grant agreement No. 653184 to the EU Horizons 2020 research and innovation framework programme. Background technique [0003] Crystalline A / M / X materials such as metal halide perovskites are extremely promising photoactive materials. They have been used to make a variety of optoelectronic devices such as solar cells, light-emitting diodes and lasers. Photovoltaic devices based on perovskite materials are the most mature metal halide perovskite-bas...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/46
CPCY02E10/549H10K71/15H10K85/215H10K85/50H10K30/40H10K71/441H10K85/00H10K30/30H10K50/11H10K85/30
Inventor 亨利·詹姆斯·施耐德伯纳德·威戈帕比塔·库马尔·纳亚克纳基塔·金柏莉·诺埃尔
Owner OXFORD UNIV INNOVATION LTD