An integrated micro LED chip and its manufacturing method

A manufacturing method and an integrated technology, applied in the direction of semiconductor devices, electrical components, circuits, etc., can solve the problems of epitaxial growth difficulties, low brightness, low yield, etc., to reduce complexity, save production costs, and prevent optical crosstalk Effect

Active Publication Date: 2022-02-25
FUJIAN PRIMA OPTOELECTRONICS CO LTD
View PDF4 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] For integrated Micro LED chips, the biggest problem in achieving full colorization is how to make RGB three-color light sources on the same chip. Currently, there are solutions to grow RGB three-color light-emitting layers on the epitaxial layer at the same time, and there are also plans to grow RGB three-color light-emitting layers on the epitaxial layer. However, the above-mentioned solutions all have problems such as difficulty in epitaxial growth, low yield, and low brightness.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • An integrated micro LED chip and its manufacturing method
  • An integrated micro LED chip and its manufacturing method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0067] Please refer to figure 1 , an integrated Micro LED chip manufacturing method, comprising the steps of:

[0068] S1. Growing an epitaxial wafer on the substrate layer, the epitaxial wafer comprising a first color epitaxial layer;

[0069] Wherein, the first color is blue light;

[0070] In an optional embodiment, the substrate layer 1 is a sapphire substrate (Al2O3);

[0071] Specifically, in this embodiment, the thickness of the substrate layer is 650um, and one end of the epitaxial wafer formed from the substrate layer has a gallium nitride buffer layer 2 with a thickness of 2-4um. Blue LED epitaxial wafer, the wavelength of the epitaxial wafer is 400-480nm;

[0072] S2. Prepare a light-emitting unit of the first color with a preset shape on the side of the substrate layer where the epitaxial layer of the first color is grown;

[0073] Wherein, growing the epitaxial layer of the first color on the side of the substrate layer grows a PN junction, a metal oxide curre...

Embodiment 2

[0100] The difference between this embodiment and Embodiment 1 is that it further defines how to spray the light-color conversion fluorescent material:

[0101] Specifically, there are four positioning holes in the light-color conversion layer arranged in a 2*2 arrangement;

[0102] In the partial area of ​​the positioning hole of the light-color conversion layer, the light-color conversion fluorescent material is not sprayed, and the light-color conversion fluorescent materials of the other two colors except the first color among the three primary colors are sprayed in other areas. Materials include:

[0103] No light color conversion fluorescent material is sprayed in one light color conversion layer positioning hole, red light light color conversion fluorescent material is sprayed in one or two of the light color conversion layer positioning holes, and the remaining number of light color conversion fluorescent materials are sprayed. Spray green light and color conversion f...

Embodiment 3

[0106] Embodiment 3 of the present invention is an integrated Micro LED chip manufacturing method, comprising the following steps:

[0107] Step 1, growing blue light monochromatic GaN epitaxial material, the wavelength range of the epitaxial wafer is 400-475nm, and the substrate is sapphire substrate (Al2O3);

[0108] Step 2. Etching the prepared epitaxial wafer on the front side according to the 2*2 matrix shape, removing part of the P-type gallium nitride, and exposing the lower layer of N-type gallium nitride;

[0109] Step 3, prepare the oxide current spreading layer, what this embodiment uses is indium tin oxide material;

[0110] Step 4, preparing a metal current spreading layer and an etching sacrificial layer, TiPtTi alloy metal is used in this embodiment.

[0111] Step 5, prepare the insulating passivation composite layer, what this embodiment uses is the composite structure of SiO2 and Al2O3, SiO2 is the insulation layer and buffer layer in the lower layer, and Al2...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

An integrated Micro LED chip and its manufacturing method disclosed in the present invention, grow the first color epitaxial layer on the substrate layer, and prepare the first color light-emitting unit with a preset shape; deposit on the side of the substrate layer away from the first color epitaxial layer Graphical light-shielding film, etch the patterned light-shielding film to form the positioning hole of the light-color conversion layer. Since the light-emitting unit and the positioning hole are generated based on the preset shape, the designed light-color unit can be combined with the light-emitting unit and the positioning hole. Separated, automatically filter color mixing light and prevent light crosstalk; do not spray light-color conversion fluorescent materials in some areas of the positioning holes of the light-color conversion layer, and spray three primary colors in other areas except the first color The other two colors of light-color conversion fluorescent materials can obtain blue, red, and green pixel units respectively, so as to realize full color conveniently, reduce the complexity of the epitaxial structure, and realize the integration of a large number of pixels without massive transfer.

Description

technical field [0001] The invention relates to the field of LED manufacturing, in particular to an integrated Micro LED chip and a manufacturing method thereof. Background technique [0002] Micro LED manufacturing technology is currently recognized as the technology with the most development potential and the most market potential in the field of international display technology. At present, there are two ways to realize Micro LED full-color display. The first is to combine RGB three-color single chips into a screen through mass transfer, but the limitations of the mass transfer solution and the bottleneck of transfer speed are many; The second is to manufacture integrated chips, using semiconductor technology to integrate each light-emitting unit into a chip screen. [0003] For integrated Micro LED chips, the biggest problem in achieving full colorization is how to make RGB three-color light sources on the same chip. Currently, there are solutions to grow RGB three-colo...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/15H01L33/00H01L33/06H01L33/14H01L33/50
CPCH01L27/156H01L33/06H01L33/507H01L33/14H01L33/005H01L2933/0041H01L33/0095H01L33/504H01L33/32H01L33/44H01L33/502H01L33/505H01L33/60H01L2933/0025H01L2933/0058
Inventor 张帆王良旭林少军
Owner FUJIAN PRIMA OPTOELECTRONICS CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap