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Data Storage With Improved Read Performance By Avoiding Line Discharge

A data storage and memory technology, applied in the field of efficient reading, can solve the problem of inefficient reading of user scenarios

Pending Publication Date: 2021-08-31
WESTERN DIGITAL TECH INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Reading part of the user's scene is inefficient when the read operation is too slow

Method used

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  • Data Storage With Improved Read Performance By Avoiding Line Discharge
  • Data Storage With Improved Read Performance By Avoiding Line Discharge
  • Data Storage With Improved Read Performance By Avoiding Line Discharge

Examples

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Embodiment Construction

[0017] In the following, reference is made to embodiments of the present disclosure. It should be understood, however, that the disclosure is not limited to specific described embodiments. Rather, any combination of the following features and elements, whether related to different embodiments or not, is contemplated to make and practice the present disclosure. Furthermore, although embodiments of the present disclosure may achieve advantages over other possible solutions and / or over the prior art, it is not a limitation of the present disclosure whether a particular advantage is achieved by a given embodiment. Accordingly, the following aspects, features, embodiments and advantages are merely illustrative and are not to be considered elements or limitations of the appended claims unless expressly recited in the claims. Likewise, references to "the present disclosure" should not be construed as a generalization of any inventive subject matter disclosed herein, and should not b...

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PUM

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Abstract

The present invention provides a data storage with improved read performance by avoiding line discharge. The present disclosure generally relates to efficient reading that avoids line discharging between reads. When multiple read commands are present for a common word line, those read commands can be arranged from lowest sensing voltage to highest sensing voltage. Because the sensing voltage increases for each read command, and the read commands are for the same word line, the normal discharge that occurs after the sensing in the read operation can be eliminated until the highest sensing voltage read command has been executed. At that point, the discharging can occur. Because a discharge does not occur after each sensing in the read operation, the read efficiency is improved.

Description

technical field [0001] Embodiments of the present disclosure generally relate to efficient reads that avoid line discharge between reads. Background technique [0002] In a nonvolatile memory such as a NAND flash memory, write and read operations are performed to write / read data into / from the memory device. A read operation includes a read sub-operation and a transfer sub-operation. A read operation is a sub-operation among several sub-operations. [0003] During a read operation, voltages are applied to the word and bit lines to read the voltage at the location where the data resides. During read operations, charge can accumulate on word lines as well as bit lines. Therefore, word lines and bit lines are typically discharged once data has been read. Discharging occurs between reads. In other words, each read operation involves at least one discharge before the next read operation occurs. [0004] Discharging word lines and bit lines takes time. When there are dies wi...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G11C16/08G11C16/24
CPCG11C16/08G11C16/24G11C11/5642G11C16/26G11C16/32G11C16/0483G11C2211/5648G06F3/0659G11C11/4093G11C11/4085G11C11/4074G11C11/4094
Inventor R·本鲁比M·科恩
Owner WESTERN DIGITAL TECH INC