Ion loading system and method

A loading system and ion technology, applied in the field of quantum computing, can solve problems such as overlap and conflict, difficulty in integration and miniaturization, and short-circuit failure of devices such as trapped ion electrodes, so as to reduce the risk of electrode failure and reduce the difficulty of assembly and calibration , The effect of improving the utilization rate of atoms

Pending Publication Date: 2021-09-21
SOUTH UNIVERSITY OF SCIENCE AND TECHNOLOGY OF CHINA
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The atomic furnace thermal evaporation method heats the target to evaporate metal atoms. After the atoms are evaporated from the target, except for the atoms trapped in the potential field, the rest of the atoms will be evaporated on the surface of the vacuum chamber device and form A layer of metal film may cause short-circuit failure of devices such as trapped ion electrodes. In addition, if the evaporated atoms form a film on the window of the vacuum cavity, it will affect the transmittance of the vacuum window to the laser, produce aberrations, and affect quantum operations. and read fidelity and efficiency
The

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Ion loading system and method
  • Ion loading system and method
  • Ion loading system and method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0030] The technical solutions in the embodiments of the present application will be described below with reference to the drawings in the embodiments of the present application.

[0031] In the description of the present application, the terms "first", "second" and the like are only used for distinguishing descriptions, and do not represent sequence numbers, nor can they be understood as indicating or implying relative importance.

[0032] In the description of the present application, the terms "comprising", "comprising", etc. indicate the presence of described features, integers, steps, operations, elements and / or components, but do not exclude one or more other features, steps, operations, The presence or addition of elements, components and / or collections thereof.

[0033] In the description of the present application, the terms "horizontal", "vertical", "hanging" and the like do not mean that the components are required to be absolutely horizontal or hang, but may be sli...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The embodiment of the invention provides an ion loading system and method, and the system comprises an atom source which is used for generating a to-be-ionized atom beam, the atom source comprising a plurality of atom pipelines, a preset included angle being formed between the plurality of atom pipelines, the plurality of atom pipelines being connected to a heating power supply, to form a plurality of independent heating loops; an ion trap device, arranged in the emitting direction of the atom beams, and the multiple atom beams being partially overlapped at the potential field center of the ion trap device; a deflecting mirror, arranged at the intersection point of the center lines of the atomic pipelines; an ablating laser source, ablating laser emitted by the ablating laser source being emitted into the atom source through the deflecting mirror. According to the invention, generation of multiple kinds of atom beams and independent control of multiple kinds of atom sources are realized, and multiplexing and automatic alignment of the atom sources and paths when atoms are generated by different methods are realized by multiplexing the atom sources.

Description

technical field [0001] The present application relates to the technical field of quantum computing, in particular, to an ion loading system and method. Background technique [0002] The trapped ion quantum computing and quantum network system uses trapped ions as qubits to realize quantum computing and quantum state transmission. The use of electromagnetic fields to trap ions in ultra-high vacuum can greatly isolate environmental noise and the decoherence process of quantum states caused by noise. The ion-light interaction generated by laser irradiation on ions realizes the transformation of electronic states in ions, and then realizes operations such as preparation, calculation, and state reading of quantum states. At present, only the same kind of ions in the ion trap can no longer meet the needs of multi-ion quantum computing and long-distance transmission of quantum states in quantum networks. [0003] An important step in the preparation of ion trap quantum computing ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): G21K1/00
CPCG21K1/00
Inventor 王钊
Owner SOUTH UNIVERSITY OF SCIENCE AND TECHNOLOGY OF CHINA
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap