A processing method and system for preparing metal single-element two-dimensional topological materials

A two-dimensional topology and processing method technology, applied in the field of processing methods and systems for preparing metal single-element two-dimensional topological materials, can solve the problems of harsh processing conditions and processing equipment, inconvenient wide implementation and application, and avoid toxic chemical reagents The use of high-cost and high-precision equipment is avoided, and the effect of good stability

Active Publication Date: 2022-04-08
GUANGDONG UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] In view of the above defects, the purpose of the present invention is to propose a processing method and system for preparing metal single-element two-dimensional topological materials, which is used to solve the problem that the existing processing methods have strict requirements on processing conditions and processing equipment, and are not easy to be widely implemented and applied.

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  • A processing method and system for preparing metal single-element two-dimensional topological materials
  • A processing method and system for preparing metal single-element two-dimensional topological materials
  • A processing method and system for preparing metal single-element two-dimensional topological materials

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Embodiment 1

[0032] like figure 1 As shown, a processing method for preparing metal single-element two-dimensional topological materials, which includes the following content:

[0033] The elemental metal powder is mixed with zirconia particles to obtain a mixture.

[0034] The mixture is packed into a ceramic reaction tube and fixed in a closed protection chamber with an inert electrode to create a vacuum protection atmosphere.

[0035] The mixture is subjected to high-voltage electric discharge machining, and then subjected to rapid low-temperature cooling to obtain a reaction product.

[0036] The reaction product was taken out and sieved to remove zirconia particles to obtain a metal single-element two-dimensional topological material.

Embodiment 2

[0038] A method for preparing a metal single-element two-dimensional topological material, comprising the following steps:

[0039] S1. Prepare a mixture of germanium powder and zirconia particles: sieve zirconia particles with a particle size of 2-3mm and fully mix them with germanium metal powder;

[0040] S2. Fill the mixture prepared in S1 into the ceramic reaction tube, and press it properly so that the mixture can be fully contacted together, while leaving a certain margin to reserve space for subsequent high-temperature processing expansion; The graphite electrode slot of the spring fixes the ceramic reaction tube; both ends of the electrode are in full contact with the mixture to form a certain clamping force; use a vacuum pump to vacuumize the sealed protection chamber, and the vacuum degree is 5Pa;

[0041] S3. The mixture is subjected to discharge machining by a transient high-voltage discharge system, and subjected to rapid low-temperature cooling, which specifical...

Embodiment 3

[0047] A method for preparing a metal single-element two-dimensional topological material, comprising the following steps:

[0048] S1. Prepare a mixture of tin powder and zirconia particles: sieve zirconia particles with a particle size of 2-3mm and fully mix them with germanium metal powder;

[0049] S2. Fill the mixture prepared in S1 into the ceramic reaction tube, and press it properly so that the mixture can be fully contacted together, while leaving a certain margin to reserve space for subsequent high-temperature processing expansion; The graphite electrode slot of the spring fixes the ceramic reaction tube; both ends of the electrode are in full contact with the mixture to form a certain clamping force; use a vacuum pump to vacuumize the sealed protection chamber, and the vacuum degree is 5Pa;

[0050] S3. The mixture is subjected to discharge machining by a transient high-voltage discharge system, and subjected to rapid low-temperature cooling, which specifically inc...

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Abstract

The invention relates to the field of metal single-element two-dimensional topological materials, and discloses a processing method and system for preparing metal single-element two-dimensional topological materials. The processing method includes the following contents: mixing metal elemental powder and zirconia particles; putting the mixture into a ceramic reaction tube and fixing it in a closed protection chamber with an inert electrode to create a vacuum protection atmosphere; performing high-voltage discharge processing on the mixture, Rapid low-temperature cooling is then carried out; the reaction product is taken out and sieved to remove zirconia particles to obtain a metal single-element two-dimensional topological material. The processing method can convert metal elemental powder into a metal single-element two-dimensional topological material, the cost of raw materials is low, the process is simple, avoiding the use of toxic chemical reagents, avoiding the use of high-cost and high-precision equipment, and meeting the requirements of low cost, green and environmental protection , sustainable development and other needs.

Description

technical field [0001] The invention relates to the field of metal single-element two-dimensional topological materials, in particular to a processing method and system for preparing metal single-element two-dimensional topological materials. Background technique [0002] Metal single-element two-dimensional topological materials have rich physical and chemical properties and broad application prospects. Many main group elements can form a stable single-layer structure, which has the quantum spin Hall effect due to the spin-orbit coupling. A two-dimensional topological material with quantum spin Hall effect, that is, a quantum spin Hall insulator, has a topological energy gap opened due to spin-orbit coupling in its body, and a conductive channel protected by topology at the boundary, which can realize non-dissipative electrons. transport. [0003] At present, the preparation methods of metal single-element two-dimensional topological materials mainly include mechanical ex...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B22F3/105B22F3/24B22F3/00
CPCB22F3/105B22F3/1007B22F3/24B22F3/003B22F2999/00B22F2003/248B22F2003/1051B22F2201/20
Inventor 陈云董善坤丁树权谢斌李梓健贺梓霖陈新高健陈桪
Owner GUANGDONG UNIV OF TECH
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