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TSV-based ultra-wide stop-band V-waveband SIW filter

A filter and wide stopband technology, applied in the field of three-dimensional integrated circuits, can solve the problem of high loss, achieve the effect of widening stopband and improving out-of-band characteristics

Pending Publication Date: 2022-02-15
XIAN UNIV OF TECH
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

SIW filters based on 3D integrated circuits and through-silicon vias (Through-Silicon Via, TSV) solve the defect of high loss of LTCC-based SIW filters in the terahertz band

Method used

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  • TSV-based ultra-wide stop-band V-waveband SIW filter
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  • TSV-based ultra-wide stop-band V-waveband SIW filter

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Embodiment Construction

[0020] The present invention will be described in detail below in conjunction with the accompanying drawings and specific embodiments.

[0021] The TSV-based ultra-wide stop band V-band SIW filter of the present invention, the sixth-order substrate integrated waveguide direct coupling filter, adopts the upper and lower two metal layer (copper) RDL structures as the high and low level areas of the filter circuit respectively, and the upper and lower layers The structure of the RDL is used as the high and low level areas of the filter circuit. The middle of the upper and lower RDLs is arranged with TSV to realize the direct coupling function together with the upper and lower RDLs. At the same time, the two sides of the upper RDL are respectively connected to the input RDL segment and the output RDL. part. The filter is sixth order, that is, there are six resonant cavities.

[0022] Such as figure 1 As shown, it includes the upper RDL1 and the lower RDL2 arranged in parallel in...

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Abstract

The invention discloses a TSV-based ultra-wide stop-band V-waveband SIW filter, which comprises an upper-layer RDL and a lower-layer RDL which are arranged in parallel along the horizontal direction, wherein a silicon substrate is arranged between the upper-layer RDL and the lower-layer RDL, six resonant cavities formed by TSVs are distributed on the silicon substrate, and two opposite sides of the upper-layer RDL are respectively provided with an input RDL port and an output RDL port. According to the invention, a directly coupled topological structure is adopted, so that six-order substrate integrated waveguide filtering is realized.

Description

technical field [0001] The invention belongs to the technical field of three-dimensional integrated circuits, and relates to a TSV-based ultra-wide stop-band V-band SIW filter. Background technique [0002] At present, wireless communication technology is developing vigorously. In order to make such systems meet the requirements of miniaturization, high performance and low cost, more and more new structures are researched and designed. Traditional filters generally use PCB (Printed circuitboard, PCB) technology. When facing high-frequency bands, the substrate thickness obtained by PCB technology is usually not very uniform, and the dielectric constant and filter size are not very accurate, which affects the filtering. device performance. The SIW filter can also be realized by Low Temperature Co-fired Ceramics (LTCC), which has the advantages of high quality factor, small size and excellent high-frequency characteristics, but at the same time, LTCC also has certain defects t...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01P1/208
CPCH01P1/2088
Inventor 王凤娟卢颖余宁梅杨媛尹湘坤朱樟明
Owner XIAN UNIV OF TECH