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A method of manufacturing a semiconductor isolation structure

A technology of isolation structure and manufacturing method, which is applied in semiconductor/solid-state device manufacturing, semiconductor devices, electric solid-state devices, etc., can solve problems such as height difference, polysilicon residue, and secondary damage on the substrate surface, so as to improve the forming process and eliminate The effect of height difference and avoiding secondary damage

Active Publication Date: 2022-04-19
晶芯成(北京)科技有限公司 +1
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, after the trenches are formed by two dry etching processes, there is a height difference between the top surfaces of the trenches in the logic region and the pixel region, which is prone to the problem of polysilicon residue and secondary damage to the substrate surface

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  • A method of manufacturing a semiconductor isolation structure
  • A method of manufacturing a semiconductor isolation structure
  • A method of manufacturing a semiconductor isolation structure

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Embodiment Construction

[0056] Embodiments of the present invention are described below through specific examples, and those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. The present invention can also be implemented or applied through other different specific implementation modes, and various modifications or changes can be made to the details in this specification based on different viewpoints and applications without departing from the spirit of the present invention.

[0057] It should be noted that the diagrams provided in this embodiment are only schematically illustrating the basic idea of ​​the present invention, and only the components related to the present invention are shown in the diagrams rather than the number, shape and shape of the components in actual implementation. Dimensional drawing, the type, quantity and proportion of each component can be changed arbitrarily during actual impleme...

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Abstract

The invention provides a method for manufacturing a semiconductor isolation structure, which includes: providing a substrate, and forming a protection layer on the substrate. A first groove and a second groove are formed on the protection layer, and the width of the first groove is greater than that of the second groove. A first film layer is formed on the protective layer and in the first groove and the second groove, the first film layer covers the bottom and sidewall of the first groove, and fills the second groove. A second film layer is formed on the first film layer, and the second film layer fills the first groove. Etching the second film layer, the first film layer and the substrate to form a first groove and a second groove in the substrate. The first trench and the second trench are filled to form a filling body isolation structure. Wherein, the etching rate of the second film layer is greater than the etching rate of the first film layer. The manufacturing method of the semiconductor isolation structure proposed by the invention improves the manufacturing method of the isolation structure.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a method for manufacturing a semiconductor isolation structure. Background technique [0002] An image sensor generally includes a logic region and a pixel region. In an existing trench isolation process, different trench isolation forming methods are used for the logic region and the pixel region. Among them, the trenches in the pixel area and the logic area need to be etched twice to achieve a deeper depth. However, after the trenches are formed by two dry etching processes, there is a height difference between the top surfaces of the trenches in the logic region and the pixel region, which is prone to polysilicon residues and secondary damage to the substrate surface. [0003] Therefore, how to improve the forming process of the trench, eliminate the height difference on the surface of the trench, and avoid secondary damage to the substrate has become an urgent problem...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/762H01L27/146
CPCH01L27/1463H01L21/76224
Inventor 蔡明洋王厚有冯永波陶磊
Owner 晶芯成(北京)科技有限公司
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