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CIRCUITS AND METHODS FOR CONTROLLED DISCHARGE OF HIGH (Positive OR Negative) VOLTAGE CHARGE PUMP

A technology of discharge circuit and charge pump, which is applied in the direction of electrical components, output power conversion devices, and conversion equipment without intermediate conversion to AC, and can solve problems such as breakdown, ground bounce, and device reliability issues

Pending Publication Date: 2022-05-27
STMICROELECTRONICS SRL
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

If the capacitor discharge operation is not performed correctly, a number of potential problems can arise, including: ground bounce (due to discharge to the ground node), supply noise generation (due to discharge to the supply node), latch-up (if an uncontrolled high current is dumped into the ground / supply node and the local body is forward biased), snapback (if an uncontrolled high current is dumped into the ground / supply node and a parasitic bipolar junction transistor is triggered), or device reliability issues (such as , resulting in junction breakdown, oxide-related issues, or aging issues due to violation of safe operating area (SOA) limits in response to uncontrolled current flow)

Method used

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  • CIRCUITS AND METHODS FOR CONTROLLED DISCHARGE OF HIGH (Positive OR Negative) VOLTAGE CHARGE PUMP
  • CIRCUITS AND METHODS FOR CONTROLLED DISCHARGE OF HIGH (Positive OR Negative) VOLTAGE CHARGE PUMP
  • CIRCUITS AND METHODS FOR CONTROLLED DISCHARGE OF HIGH (Positive OR Negative) VOLTAGE CHARGE PUMP

Examples

Experimental program
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Embodiment Construction

[0021] reference now Figure 2A , which shows a block diagram of a positive multistage high voltage charge pump circuit 100 with a discharge circuit 102 . is implemented as a 6-stage charge pump of Figure 2A The schematic diagram of the circuit is given by image 3 supply. The charge pump circuit 100 includes N pump stage circuits 112(1) to 112(N) connected in series. Each pump stage circuit 112 includes an input configured to receive a first voltage, and includes an output configured to generate a second voltage higher than the first voltage (Sx, where x=1 to N). In the series connection of pump stage circuits 112, the output S1 of the first pump stage circuit 112(1) is connected to the input of the second pump stage circuit 112(2), and the output S2 of the second pump stage circuit 112(2) is connected by connected to the input of the third pump stage circuit 112(3), and so on, until the input of the Nth pump stage circuit 112(N) is connected to the output of the (N-1)th...

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Abstract

Embodiments of the present disclosure relate to circuits and methods for controlled discharge of high (positive or negative) voltage charge pumps. The charge pump circuit includes a first charge pump stage circuit coupled in series with a second charge pump stage circuit. The discharge circuit operates to discharge the charge pump circuit. The discharge circuit includes: a first switching circuit coupled to the first output of the first charge pump stage circuit and configured to discharge the first output when actuated; and a second switching circuit coupled to the second output of the second charge pump stage circuit and configured to discharge the second output when actuated. The discharge control circuit actuates the first switch discharge circuit to discharge the first output and then actuates the second switch discharge circuit to discharge the second output after the first output is fully discharged.

Description

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS [0002] This application claims priority to US Provisional Patent Application No. 63 / 115,725, filed November 19, 2020, the disclosure of which is incorporated herein by reference. technical field [0003] The present invention generally relates to a circuit for controlled discharge of a multi-stage high (positive or negative) voltage charge pump. Background technique [0004] Many circuits require relatively high supply voltages (eg, 12V or more). Non-volatile memory is an example of such a circuit. Program and erase operations in such memories are performed using the Fowler-Nordeim tunneling effect that requires the use of such high voltages. It is common to generate these high voltages on-chip from relatively low supply voltages (eg, 3V, 3.3V, or 5V) using high voltage charge pump circuits. [0005] A typical multi-stage high (positive) voltage charge pump circuit 10 is figure 1 shown in. The charge pump circuit 10 inc...

Claims

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Application Information

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IPC IPC(8): H02M3/07
CPCH02M3/073H02M3/071H02M3/07G11C5/145H02M1/322G11C16/30
Inventor V·拉纳N·达拉尔
Owner STMICROELECTRONICS SRL