Thin film transistor substrate, display device, and method of manufacturing thin film transistor substrate
A technology of thin film transistors and display devices, which is applied in the direction of transistors, semiconductor/solid-state device manufacturing, semiconductor devices, etc., and can solve the problems of deterioration of cut-off current characteristics and increase of leakage current, etc.
Pending Publication Date: 2022-05-31
SAMSUNG DISPLAY CO LTD
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Problems solved by technology
Strong electric field may cause short channel effect or hot electron effect, resulting in increased leakage current and deterioration of off-state current characteristics
Method used
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[0046] Reference will now be made in detail to embodiments, examples of which are illustrated in the accompanying drawings, wherein like reference numerals refer to like elements throughout. In this regard, the present embodiments may have different forms and should not be construed as being limited to the descriptions set forth herein. Accordingly, the embodiments are merely described below, by referring to the figures, to explain aspects of the present description. As used herein, the term "and / or" includes any and all combinations of one or more of the associated listed items. Throughout the disclosure, the expression "at least one of a, b, and c" means only a, only b, only c, both a and b, both a and c, both b and c, a , all of b and c.
[0047] As the inventive concept allows for various changes and numerous embodiments, specific embodiments will be illustrated in the drawings and described in detail in the written description. The effects and features of the present d...
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A thin film transistor substrate having improved electrical characteristics such as off-current characteristics of a thin film transistor without increasing the number of mask processes, a display device, and a method of manufacturing the thin film transistor substrate are provided. The thin film transistor substrate includes: a semiconductor layer including a first conductive region, a second conductive region, and a first semiconductor region; the lower electrode is arranged on the semiconductor layer and at least partially overlaps with the first semiconductor region; the upper electrode is arranged on the lower electrode and is at least partially overlapped with the first semiconductor region, and a first boundary between the first semiconductor region and the first conductive region is overlapped with a first edge of the upper electrode; and a second boundary between the first semiconductor region and the second conductive region coincides with the edge of the lower electrode or the second edge of the upper electrode.
Description
[0001] Cross References to Related Applications [0002] This application is based on and claims the benefit of priority from Korean Patent Application No. 10-2020-0162678 filed with the Korean Intellectual Property Office on November 27, 2020, the disclosure of which is incorporated herein by reference in its entirety. technical field [0003] One or more embodiments relate to a thin film transistor substrate, a display device, and a method of manufacturing the thin film transistor substrate. Background technique [0004] The display device visually displays the data. Display devices are used as display units for small products such as mobile phones or for large products such as televisions. [0005] These display devices include a plurality of pixels that emit light by receiving electrical signals to display images to the outside. Each pixel includes a display element, eg, in the case of an organic light-emitting display device, an organic light-emitting diode (OLED) as...
Claims
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IPC IPC(8): H01L29/423H01L29/786H01L21/77H01L27/12H01L27/32
CPCH01L29/4238H01L29/42376H01L29/7869H01L27/1229H01L27/1225H01L27/1255H01L27/127H10K59/1213H01L29/42384H01L29/78645H01L27/124H01L29/78696H10K59/1216H10K59/1201H01L27/1222H01L29/66757H01L29/78675H01L27/1274
Inventor 金根佑
Owner SAMSUNG DISPLAY CO LTD