Interconnection structure

Abstract

The invention discloses an interconnection structure which is formed in a semiconductor element. The interconnect structure includes a dielectric layer disposed over the substrate. The dielectric layer includes a region and a plurality of protruding structures. The plurality of protruding structures are distributed in the area. A metal layer is disposed on the dielectric layer. The tops of the plurality of protruding structures are exposed relative to the metal layer. Any straight path across the middle portion of the region intersects a portion of the plurality of protruding structures.

Description

technical field [0001] The present invention relates to a semiconductor manufacturing technology, and more particularly, to an interconnect structure in a semiconductor device. Background technique [0002] The semiconductor components all include interconnection structures for connecting related components in the integrated circuit to complete the required circuit structure. [0003] As is generally known, the required circuit structure can be fabricated into a semiconductor device structure using semiconductor fabrication techniques to achieve the fabrication of an integrated circuit. For example, a plurality of transistor components can be included in the structure of the conductor element. These transistors need to be connected to other components using interconnect structures. [0004] That is, after a variety of components are fabricated on a substrate, an interconnect structure is required to provide electrical connection between the components. On the substrate, f...

AI Technical Summary

Problems solved by technology

The copper line width in the low component density area is relatively large, which is prone to sinking and reduces the quality of the interconnection structure.

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