Negative voltage level converting circuit

Abstract

The negative voltage level conversion circuit belongs to the technical field of mixed signal processing integrated circuit and non-volatile memory circuit design. It is characterized in that it contains: two inverters composed of PMOS transistors and NMOS transistors respectively, the input and output ends of the two inverters are connected to each other to form a positive feedback channel of the output voltage, and the output positive high voltage is inverted by one of them. The negative voltage is transmitted by the PMOS tube of the phase device, and the negative low voltage is transmitted by the NMOS tube. This positive feedback channel speeds up the speed of level conversion; a CMOS inverter working under the input voltage makes the branch currents on both sides asymmetrical, and reduces The power consumption required for conversion is reduced; the initial input voltage of the two inverters is determined by two PMOS transistors whose gates are grounded. The invention has fast level conversion speed, can still work normally when the input voltage is lowered, and increases the ability of reducing the size of the transistor.

Description

technical field [0001] The negative voltage level conversion circuit relates to the technical fields of mixed signal processing integrated circuit and non-volatile memory circuit design. Background technique [0002] Currently, among non-volatile memories, flash memory (Flash Memory) is developing rapidly due to its high programming speed, high integration and superior performance. In 1984, Masuoka and others proposed the concept of flash memory for the first time, that is, the high speed of flash erasing was realized by erasing and programming by bit and bit by block (sector), and eliminated EEPROM (Erasable Programmable Read-only memory: Erasable Programmable Read-only memory: Erasable Programmable Read-only memory) necessary selector for programming read-only memory). [0003] figure 1 is a cross-sectional view of a traditional flash memory unit, which is a stacked gate structure composed of a polysilicon floating gate 103 (Floating Gate) and a control gate 101 (Control...

AI Technical Summary

Problems solved by technology

Further experiments show that for traditional negative high-voltage level shifting circuits, the normal operation of the circuit can only be guaranteed when the power supply voltage does not decrease, which limits the ability to reduce the size of high-voltage transistors and increases the complexity of the manufacturing process

[0011] After searching, there is no disclosure of the same or similar circuit as the negative voltage level conversion circuit proposed by the present invention in the existing patent literature and non-patent literature

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