Semiconductor display device, mfg. method thereof and active array display device
A technology of a display device and a manufacturing method, which is applied to the manufacturing of semiconductor/solid-state devices, semiconductor devices, transistors, etc., can solve problems such as the adverse effect of the polysilicon layer 110
Inactive Publication Date: 2005-09-07
SANYO ELECTRIC CO LTD
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Problems solved by technology
In other words, when the amorphous silicon layer is formed on the glass substrate 100 and laser irradiation is performed, although the time is extremely short, the amorphous silicon layer and even the glass substrate 100 will become high temperature, which will make the inside of the substrate 100 The impurity seeps out and has a bad influence on the polysilicon layer 110.
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[0042] Hereinafter, an embodiment in which the semiconductor display device and its manufacturing method of the present invention is applied to a liquid crystal display device and its manufacturing method will be described with reference to the accompanying drawings.
[0043] figure 1 , is a schematic circuit configuration diagram of a liquid crystal display device according to the present embodiment, showing a pixel region formed on the same substrate and a driver region formed around it. figure 2 (a), means if figure 1 In the pixel area of the liquid crystal display device shown, a plane is formed in the vicinity of 1 pixel (1 dot (det)), which is the minimum unit of display.
[0044] figure 2The drain 10d , the channel 10c , and the source 10s of the top-gate double-gate transistor DTFT shown in ( a ) are formed in the polysilicon layer 10 . Then, the drain 10d of the transistor DTFT is connected to the data (drain) signal line 23 via the contact hole 22 . In addi...
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Abstract
The invention provides a semiconductor display device, its manufacturing menthod , and active-matric display device, which can suitably maintain its display quality even when the device is manufactured through a step of producing a polycrystalline semiconductor by irradiating an amorphous semiconductor positioned above a light shielding layer with laser light. A light shielding layer 2 is formed on a glass substrate 1 and a silicon nitride layer 3 and a silicon oxide layer 4 are laminated upon the substrate 1 and layer 2. On the silicon oxide layer 4, an amorphous silicon layer which becomes a polycrystalline silicon layer 10 constituting a transistor DTFT is formed. Then the polycrystalline silicon layer 10 is produced by irradiating the amorphous silicon layer with laser light.
Description
technical field [0001] The present invention relates to a semiconductor display device and a manufacturing method thereof, in particular to a semiconductor display device with a light-shielding layer that shields a driving component from light irradiation and a manufacturing method thereof. Background technique [0002] As an example of such a semiconductor display device, Figure 8 That is, a cross-sectional structure of a conventional liquid crystal display device is shown. This liquid crystal display device is manufactured in the following steps. [0003] First, on the glass substrate 100 , the light-shielding layer 101 is formed by forming a metal film and patterning it. Secondly, and made from silicon oxide (SiO 2 ) formed of an insulating layer 102 is formed on the light shielding layers 101 and the glass substrate 100 . Then, an amorphous silicon layer is formed as a polysilicon layer 110 on this insulating layer 102, and the polysilicon layer 110 is formed by irra...
Claims
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IPC IPC(8): G02F1/1333G02F1/1362H01L21/336H01L29/786
CPCH01L29/78621H01L27/1251H01L29/78633G02F1/133345H01L29/78645G02F1/136209H01L29/6675G02F1/13454Y10T428/24479G02F1/136
Inventor 佐野景一山田努
Owner SANYO ELECTRIC CO LTD