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Semiconductor laser device

A technology of laser devices and semiconductors, applied in the direction of semiconductor lasers, laser components, lasers, etc., can solve the problem that semiconductor lasers have not been put into practice

Inactive Publication Date: 2006-03-29
SHARP KK
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0015] However, because there is no clear guideline for V1, V2, W1, W2 components, this semiconductor laser has not been put into practice so far

Method used

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  • Semiconductor laser device
  • Semiconductor laser device
  • Semiconductor laser device

Examples

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no. 1 example

[0050] figure 1 is a diagram showing the layer structure of the semiconductor laser device in the first embodiment of the present invention viewed from the end face side. exist figure 1 neutralize Figure 7 The same or similar components shown in the Figure 7 The same reference numerals indicate.

[0051] figure 2 is a detailed view showing the multiple quantum well active layer 3 of the semiconductor laser device in the first embodiment. exist figure 2 In , the vertical axis represents the Eg of the crystals constituting each layer, and the horizontal axis represents the distance from the substrate.

[0052] The multiple quantum well active layer 3 has two quantum well layers 3a and barrier layers 3b provided on both sides of each quantum well layer 3a. The quantum well layer 3a is made of In 1-V1 Ga V1 As 1-W1 P W1 Formed, the barrier layer 3b is made of In 1-V2 Ga V2 As 1-W2 P W2 constitute. Here, V1 and V2 satisfy V1

[...

no. 2 example

[0083] Figure 4 is a diagram showing the crystal layer structure of the semiconductor laser device in the second embodiment of the present invention viewed from the end face side. exist Figure 4 , with the first embodiment figure 1 The same components shown in the figure 1 The same reference numerals indicate.

[0084] exist Figure 4 , shows n-type GaAs substrate 1, n-type Al 0.45 Ga 0.55 As first capping layer 2 (thickness 3.0 μm), multiple quantum well active layer 23 (emission wavelength 0.78 μm), P-type Al 0.49 Ga 0.51 As second cap layer 4 (thickness 0.1967μm), p-type GaAs etch stop layer 5 (thickness 3nm), p-type Al 0.49 Ga 0.51 As third capping layer 26 (thickness 1.28 μm), n-type Al 0.7 Ga 0.3 As current blocking layer 27 (thickness 0.7 μm), and p-type GaAs contact layer 28 (thickness 2.0 μm). The current blocking layer 27 has a strip-shaped opening portion, which mainly forms a current confinement structure in which current can only flow directly under ...

no. 3 example

[0090] 5(a) is a view showing the crystal layer structure of the semiconductor laser device in the third embodiment of the present invention viewed from the end face side, and FIG. 5(b) is a cross-sectional view along line b-b of FIG. 5(a). In Figures 5(a) and 5(b) with the first embodiment figure 1 The same components shown in the figure 1 The same reference numerals indicate.

[0091] In Fig. 5(a), an n-type GaAs substrate 1, n-type Al 0.43 Ga 0.57 As first capping layer 2 (thickness 3.0 μm), multiple quantum well active layer 33 (emission wavelength 0.78 μm), P-type Al 0.6 Ga 0.4 As second cap layer 4 (thickness 0.1967 μm), p-type GaAs etch stop layer 5 (thickness 3nm), and p-type Al 0.49 Ga 0.51 As third capping layer 6 (thickness 1.28 μm). The third cover layer 6 has a raised strip structure. The third cover layer 6 has a height of approximately 2.5 μm and a maximum width of approximately 4.0 μm. In particular, the portion of the third cap layer 6 in contact wi...

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Abstract

A semiconductor laser device has an n-type AlGaAs first cladding layer 2, a multiple quantum well active layer 3, and a p-type AlGaAs second cladding layer 4 formed in this order and supported by an n-type GaAs substrate 1. The multiple quantum well active layer 3 has two quantum well layers 3a and barrier layers 3b provided on both sides of each quantum well layer 3a. The quantum well layers 3a are each made of In1-v1Gav1As1-w1Pw1, while the barrier layers 3b are each made of In1-v2Gav2As1-w2Pw2. Here, v1 and v2 satisfy v1 H01S 5 / 343 9 16 2 2003 / 1 / 28 1452285 2003 / 10 / 29 1248379 2006 / 3 / 29 2006 / 3 / 29 2006 / 3 / 29 Sharp K.K. Japan Kasai Hidenori Yamamoto Kei Atsunushi Fumihiro tao fengbei hou yu 11105 Japan 2002 / 1 / 28 018198 / 02 Japan 2002 / 11 / 7 323627 / 02

Description

technical field [0001] The invention relates to a semiconductor laser device. Background technique [0002] Generally, a semiconductor laser device with a power equal to or higher than 150 mW emitting a wavelength of 780 nm as a continuous output has such Figure 7 structure shown. Figure 7 is an end view of a semiconductor laser device, showing the crystal layer structure of the semiconductor laser device, where the layer structure extends in a direction perpendicular to the surface of the drawing. [0003] exist Figure 7 , shows n-type GaAs substrate 1, n-type Al X Ga 1-X As first capping layer 2, active layer 43, p-type Al X Ga 1-X As second cap layer 4, p-type GaAs etch stop layer 5, banded p-type Al X Ga 1-X As third capping layer 6, n-type GaAs current blocking layer 7 forming strip-shaped groove portion, p-type GaAs contact layer 8, n-side electrode 11 and p-side electrode 12. [0004] A p-type GaAs contact layer 8 is formed so as to cover the p-type Al X Ga ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01S5/343H01S5/22H01S5/227H01S5/34
CPCH01S5/34373H01S5/34386H01S5/3434B82Y20/00H01S5/2206H01S5/3403
Inventor 河西秀典山本圭厚主文弘藤城芳江吉田智彦
Owner SHARP KK
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