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Gate controlling circuit for raising transistor with nigh voltage input

A gate control and transistor technology, applied in logic circuits, electrical components, electronic switches, etc., can solve the problems of input signal can not be turned off by PMOS transistor, TDDB reliability problem, system failure and so on

Inactive Publication Date: 2007-01-03
SEMICON MFG INT (SHANGHAI) CORP +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

System failure may occur if the pad voltage is lower than the input threshold voltage on other die
[0004] (2) Leakage current: Because the pad voltage does not fully reach the power supply potential, there will be leakage current in other chips because the input signal cannot completely turn off the PMOS transistors in other chips
[0008] To sum up, when a high voltage signal is applied to the pad, if one cannot control the gate bias voltage of the pull-up transistor, there will be reliability problems such as TDDB, and due to the small noise tolerance cause system failure

Method used

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  • Gate controlling circuit for raising transistor with nigh voltage input
  • Gate controlling circuit for raising transistor with nigh voltage input
  • Gate controlling circuit for raising transistor with nigh voltage input

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Embodiment Construction

[0039] Preferred embodiments according to the present invention will now be described hereinafter with reference to the accompanying drawings.

[0040] image 3 shows a schematic circuit diagram including a gate control circuit for a pull-up transistor according to the present invention, in this circuit, the gate terminal G of the pull-up transistor MPU 3 is connected to the gate control circuit 31, the source of the transistor MPU 3 The terminal S is connected to the power supply potential Vdd, the drain terminal D of the transistor MPU 3 is connected to the pad PAD node, and the base B of the transistor MPU 3 is connected to an N-well. image 3 The operation of the circuit is that when a high voltage signal is applied, the gate control circuit 31 is used to control the gate bias voltage of the pull-up transistor MPU 3, that is, the pull-up transistor is controlled by the gate control circuit 31 The gate voltage of the MPU 3, and the well bias of the transistor MPU 3 are con...

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PUM

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Abstract

In the circuit, the gate end (G) of voltage-pulling transistor is connected with gate control circuit. The source end (S) of voltage-pulling transistor is connected with the potential of power. The drain electrode (D) of voltage-pulling transistor is connected with node of welding-sheet, and the substrate of voltage-pulling is connected with a N-well. When the high voltage signal is applied, the gate control circuit is used to control the gate bias voltage of the voltage-pulling transistor.

Description

technical field [0001] The present invention relates to a gate control circuit for a pull-up transistor, in particular to a gate control circuit for a pull-up transistor for high voltage input. Background technique [0002] figure 1 A known pull-up transistor circuit is schematically shown, in which the source terminal S of the PMOS pull-up transistor MPU1 and its base B are connected together and then connected to the power supply potential Vdd, the gate terminal G of the transistor MPU1 is connected to Vss, while the drain terminal D of the transistor MPU 1 is connected to the drain terminal D of the NMOS transistor MN1, the base B of the transistor MN1 is connected to Vss, the gate terminal G of the transistor MN1 is connected to the power supply potential Vdd, and the transistor MN1 The source terminal S of is connected to the pad PAD. exist figure 1 In the circuit, because the gate terminal G of the NMOS transistor MN1 is connected to the power supply potential Vdd, ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H03K19/00H03K19/0944H03K17/00H03K17/687
Inventor 李炳云
Owner SEMICON MFG INT (SHANGHAI) CORP
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