Method for manufacturing thin-film transistor
A technology of thin film transistor and manufacturing method, applied in semiconductor/solid-state device manufacturing, semiconductor device, optics, etc., can solve problems such as blistering
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[0016] As shown in Figure 1, during the deposition of the gate insulating layer, the copper gate electrodes and gate lines are exposed to an ammonia-containing plasma environment and cause adhesion and interaction problems. In order to avoid these problems, it is proposed to deposit a layer of microcrystalline layer (such as microcrystalline silicon) and perform plasma treatment (such as nitrogen plasma treatment) to deposit gate insulation by plasma-enhanced chemical vapor deposition. Before layering, cover a thin layer of buffer layer on the copper gate electrode surface.
[0017] 2A to 2D show a method of manufacturing a thin film transistor according to an embodiment of the present invention.
[0018] First please refer to FIG. 2A , a substrate 902 is provided, such as a glass substrate, and its thickness is, for example, less than 1mm, and then a layer of low-resistance metal layer is formed on the substrate 902, and its material is, for example, copper, silver, aluminum,...
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