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Material for preservative formation

A technology of protective film and compound, applied in photosensitive materials for opto-mechanical equipment, coating of non-metallic protective layers, thin material processing, etc., can solve problems such as unfavorable and unsatisfactory

Inactive Publication Date: 2003-01-01
TOKYO OHKA KOGYO CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] However, when the above-mentioned photoresist composition is buried in a via hole with a large aspect ratio, it is disadvantageous to generate air bubbles called voids.
[0006] In order to solve the above problems, JP-A-2000-195955 discloses an embedding material using heat-crosslinkable compounds such as melamine derivatives and benzoguanamine derivatives, but these embedding materials are not compatible with photoresist Compared with the etchant composition, although the embedding characteristics and flatness are improved, the required characteristics are not yet satisfied

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0082] For the formation of SiO 2 The substrate of the film was formed with a pore pattern with an aspect ratio of 4.5 (pore diameter: 220 nm), and a material for forming a protective film whose solid content concentration was adjusted to 10% by mass by dissolving cholic acid in propylene glycol monomethyl ether was applied to the substrate. On, heat at 180°C for 1 minute to form a protective film within the hole pattern.

[0083] Observation of the substrate in this state with a SEM (scanning electron microscope) revealed that the holes were completely buried and that the top of the hole pattern was flat.

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Abstract

The invention provides material for forming a protective film, which is excellent in stoppability and flatness when filling stopping material into a via hole, which is characterized in containing an organic solvent and a compound having at least two or more pieces of alicyclic structures. Moreover, the compound is at least one selected from spiro hydrocarbon compound, bicyclo monoterpene alkene compound, diamantane compound and steride.

Description

technical field [0001] The present invention relates to a material for forming a protective film embedded in a hole pattern when forming a multilayer wiring structure. technical background [0002] In recent years, along with the high integration of semiconductor elements and the reduction of chip size, miniaturization and multilayering of wiring are progressing. Among them, the hole pattern size formed by photolithography technology is more miniaturized. [0003] In forming such micropore patterns, it has been proposed to use a metal such as Cu, and at the same time, a photolithographic technique using a damashin method or a double damask method has been adopted. [0004] In the double gold and silver wire brocade method, after the hole pattern is formed, the hole pattern must be buried once when the upper layer wiring is formed to protect the lower layer wiring from corrosion damage. As a material for forming this protective film, use of a photoresist composition has bee...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/11G03F7/004H01L21/3205H01L21/768
CPCY10T428/31725Y10T428/15Y10T428/1419H01L21/76808G03F7/004
Inventor 越山淳胁屋和正
Owner TOKYO OHKA KOGYO CO LTD