Material for preservative formation

Abstract

The invention provides material for forming a protective film, which is excellent in stoppability and flatness when filling stopping material into a via hole, which is characterized in containing an organic solvent and a compound having at least two or more pieces of alicyclic structures. Moreover, the compound is at least one selected from spiro hydrocarbon compound, bicyclo monoterpene alkene compound, diamantane compound and steride.

Description

technical field [0001] The present invention relates to a material for forming a protective film embedded in a hole pattern when forming a multilayer wiring structure. technical background [0002] In recent years, along with the high integration of semiconductor elements and the reduction of chip size, miniaturization and multilayering of wiring are progressing. Among them, the hole pattern size formed by photolithography technology is more miniaturized. [0003] In forming such micropore patterns, it has been proposed to use a metal such as Cu, and at the same time, a photolithographic technique using a damashin method or a double damask method has been adopted. [0004] In the double gold and silver wire brocade method, after the hole pattern is formed, the hole pattern must be buried once when the upper layer wiring is formed to protect the lower layer wiring from corrosion damage. As a material for forming this protective film, use of a photoresist composition has bee...

AI Technical Summary

Problems solved by technology

[0005] However, when the above-mentioned photoresist composition is buried in a via hole with a large aspect ratio, it is disadvantageous to generate air bubbles called voids.

[0006] In order to solve the above problems, JP-A-2000-195955 discloses an embedding material using heat-crosslinkable compounds such as melamine derivatives and benzoguanamine derivatives, but these embedding materials are not compatible with photoresist Compared with the etchant composition, although the embedding characteristics and flatness are improved, the required characteristics are not yet satisfied