Semiconductor memory device and electronic information apparatus using same

Abstract

In a semiconductor memory device, a redundant memory cell is accessible based on an input address signal by a redundant word line selection signal which is output in accordance with whether data read is to be performed or a memory operation other than data read is to be performed.

Description

technical field [0001] The present invention relates to a semiconductor memory device used in electronic information equipment such as a mobile phone, and more particularly, the present invention relates to a nonvolatile semiconductor memory device such as a flash EEPROM. The invention also relates to an electronic information device using the semiconductor storage device. Background technique [0002] In a conventional semiconductor memory device, a non-redundant normal memory cell is accessed based on an input address signal, and when a normal word line for accessing the normal memory cell is defective, a redundant word line to replace the regular word line to access redundant memory cells. [0003] Referring to FIGS. 4 to 6, such a conventional semiconductor memory device will be described. [0004] FIG. 4 is a block diagram illustrating a partial structure of a conventional semiconductor memory device 100. As shown in FIG. More specifically, FIG. 4 shows a partial str...

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Problems solved by technology

Image 6 The structure shown does not improve the rate of data readout

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