Method for accessing semiconductor memory device and electronic information apparatus using same

Abstract

A semiconductor memory device, wherein, based on an input address signal, redundant memory cells can be accessed by a redundant word line selection signal, the redundant word line selection signal is different according to whether data reading is to be performed or not. It is output during the memory operation of data read.

Description

technical field [0001] The present invention relates to a semiconductor memory device used in electronic information equipment such as a mobile phone, and more particularly, the present invention relates to a nonvolatile semiconductor memory device such as a flash EEPROM. The invention also relates to an electronic information device using the semiconductor storage device. Background technique [0002] In a conventional semiconductor memory device, a non-redundant normal memory cell is accessed based on an input address signal, and when a normal word line for accessing the normal memory cell is defective, a redundant word line to replace the regular word line to access redundant memory cells. [0003] refer to Figures 4 to 6 , such a conventional semiconductor memory device will be described. [0004] Figure 4 is a block diagram illustrating a partial structure of a conventional semiconductor memory device 100. More specifically, Figure 4 A partial structure of a con...

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Image 6 The structure shown does not improve the rate of data readout

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