Clamping chuck equipment

Abstract

This invention relates to a plasma reactor apparatus (1) having improved etch uniformity and throughput. Higher etch uniformity is achieved through the use of a new gas delivery mechanism (9a) and a thermally insulated wafer chuck (42). The vacuum insulated chuck (42) also results in lower energy consumption and higher throughput.

Description

[0001] This case is a divisional application of an invention patent application with an application date of March 28, 1996, an application number of 96194041.7, and an invention title of "Plasma Etching System". technical field [0002] The present invention relates to an improved plasma reactor, in particular to a reactor capable of improving etching uniformity and yield. Background technique [0003] Plasma etching has become an important process in the manufacture of semiconductor devices in integrated circuits. A key requirement of any plasma process for fabricating semiconductor devices is that the electrical characteristics of the fabricated devices must be uniform and consistent across the wafer. In other words, the plasma etch process must enable devices with high uniformity in thickness, size, and cross-section. However, as the diameter of the wafer increases and the size of the devices decreases, the difficulty in achieving such uniformity increases. Plasma etch ...

AI Technical Summary

Problems solved by technology

Not only does convective heat loss reduce uniformity across the wafer during processing, but throughput is also reduced due to the extended time heaters take to heat the wafer prior to etching

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