Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Lithographic apparatus and device manufacturing method

A lithographic projection and component technology, which is used in semiconductor/solid-state device manufacturing, photolithography process exposure devices, microlithography exposure equipment, etc. Problems such as resist T-type topping

Active Publication Date: 2005-02-02
ASML NETHERLANDS BV
View PDF10 Cites 12 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This causes poor performance in the upper layer of photoresist
Additionally, the non-uniform nature of the photoresist after degradation can cause T-topping during development
The developer dissolves the areas under the photoresist that were not degraded during immersion, but the degraded areas at the surface are not developed uniformly

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Lithographic apparatus and device manufacturing method
  • Lithographic apparatus and device manufacturing method
  • Lithographic apparatus and device manufacturing method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0041] figure 1 A lithographic projection apparatus according to a specific embodiment of the present invention is schematically shown. The devices include:

[0042] a radiation system Ex, IL, said radiation system Ex, IL for supplying a projection beam PB of radiation such as DUV (deep ultraviolet) radiation, in this particular case the radiation system Ex, IL also comprising a radiation source LA ;

[0043] a first object table (mask table) MT equipped with a mask holder for holding a mask such as a reticle and connected to the first positioning means, the aforementioned first positioning means are used to precisely position the mask relative to the object PL;

[0044] A second object stage (substrate stage) WT equipped with a substrate holder for holding a substrate (for example, a resist-coated silicon wafer) W and connected to on the second positioning device, the above-mentioned second positioning device is used for precise positioning of the substrate relative to t...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Login to View More

Abstract

A lithographic apparatus is provided. Exposure is carried out by projecting through a liquid having a pH of less than 7, the liquid being in contact with a substrate to be exposed. The liquid advantageously comprises an anti-reflective topcoat.

Description

technical field [0001] The present invention relates to a lithographic projection apparatus (lithographic projection apparatus), the lithographic projection apparatus comprising: [0002] - a radiation system for supplying a projection beam of radiation; [0003] - a support structure for supporting a patterning device for patterning the projection beam in a desired pattern; [0004] - a substrate table for holding a substrate; [0005] - a projection system for projecting the aforementioned patterned light beam onto a target portion of the substrate; and [0006] - A liquid supply system for filling the space between the terminal element of said projection system and said substrate with a liquid. Background technique [0007] The term "patterning device" as used herein should be broadly understood to refer to a device which can be used to cause an incident radiation beam to have a patterned cross-section corresponding to an object to be deposited on a substrate. The pat...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): G03F7/20H01L21/027
CPCG03F7/70341G03F7/70866G03F7/70958G03F7/2041G03F7/70875
Inventor B·斯特雷克M·M·T·M·蒂里奇斯W·F·J·格霍-范安塞姆
Owner ASML NETHERLANDS BV
Features
  • Generate Ideas
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More