Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

High frequency detection method and high frequency detection circuit

A technology of high-frequency detection and high-frequency power supply, which is applied in the direction of measuring electric power, measuring electric variables, frequency measuring devices, etc., and can solve the problems of low reproducibility

Inactive Publication Date: 2005-02-16
巴尔工业公司
View PDF0 Cites 7 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Changes in the amplitude of voltage, current, power, etc. at frequency f1 also cause amplitude changes in voltage, current, power, etc. at frequency f, and the reproducibility of the measurement is very low

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • High frequency detection method and high frequency detection circuit
  • High frequency detection method and high frequency detection circuit
  • High frequency detection method and high frequency detection circuit

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0017] figure 1 It is a block diagram showing the configuration of a semiconductor manufacturing apparatus according to an embodiment of the present invention. exist figure 1 Among them, the semiconductor manufacturing apparatus includes: high-frequency power sources 1, 9, high-frequency sensors 2, 5, matching devices 3, 8, controller 4, monitor device 6, and reaction chamber 7. This semiconductor manufacturing device sends the high-frequency power of a relatively high frequency f (such as 500MHz) from the high-frequency power supply 1 and the high-frequency power of a relatively low frequency f1 (such as 800KHz) from the high-frequency power supply 9 to a reaction chamber. 7 supply, and make it generate plasma.

[0018] The high-frequency power supply 1 is a main power supply device that supplies high-frequency power of a frequency f to the reaction chamber 7 . Such as figure 2 As shown, the high-frequency power supply 1 includes: an oscillator 10, an amplifier 11, a dir...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

A high frequency detection circuit in accordance with the present invention detects information about a first high frequency power in a high frequency power source device supplying the first high frequency power having a first frequency (f) and a second high frequency power having a second frequency (f1) lower than the first frequency (f) to a load (7). A third high frequency signal (V1) that is a mixed signal of a first high frequency signal having the first frequency (f) and a second high frequency signal having the second frequency (f1) is detected by a directional coupler (12). The third high frequency signal (V1) is converted to a fourth high frequency signal (V1') having a third frequency (Deltaf) between the first and second frequencies (f, f1) using a heterodyne system. A progressive wave power (Pf) of the first frequency (f) is detected based on the fourth high frequency signal (V1').

Description

technical field [0001] The present invention relates to a high-frequency detection method and a high-frequency detection circuit, in particular to a method of supplying a load with a first high-frequency power having a first frequency and a second high-frequency power having a second frequency lower than the first frequency A high-frequency detection method and a high-frequency detection circuit for detecting information on first high-frequency power in a high-frequency power supply device. Background technique [0002] In recent years, a plasma processing technique of supplying high-frequency power of a relatively high frequency f and high-frequency power of a relatively low frequency f1 to one reaction chamber has been developed. In this plasma processing technology, plasma is mainly generated by high-frequency power of frequency f, and high-frequency power of frequency f1 is used to control the movement of ions near the substrate. [0003] In this plasma processing techn...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): G01R21/01G01R21/00G01R23/14H05H1/46
CPCG01R23/145G01R21/00G01R21/01
Inventor 渡边慎一佐伯登
Owner 巴尔工业公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com