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Electrochemical edge and bevel cleaning process and system

An electrochemical and edge technology, applied in the direction of circuits, electrolytic components, electrolytic processes, etc.

Inactive Publication Date: 2005-07-06
NUTOOL
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, if any accidental leak occurs and droplets of the edge copper removal solution get into the lower chamber, it can mix with the electrical treatment solution and cause problems

Method used

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  • Electrochemical edge and bevel cleaning process and system
  • Electrochemical edge and bevel cleaning process and system
  • Electrochemical edge and bevel cleaning process and system

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Embodiment Construction

[0051] The present invention provides a solution to the above concerns. The approach of the present invention, as described below, advantageously reduces the edge copper removal time, thus increasing throughput, without the problems associated with using even more aggressive etching solutions. The technology has the ability to use mild etch solutions that do not contain oxidants, so there are no etchant stability issues. Conductors on the front edge of the workpiece can be removed without problems with other front parts of the workpiece being etched or affected by droplets of etchant, since for the case where copper is the conductor of the examples, the mild etching solution has less than 100 Å / sec, A very low chemical etch rate below 50 Å / sec is preferred. These rates correspond to a range of etch rates below about 3000 Å / min, as opposed to etch rates above about 20,000 Å / min for aggressive etching solutions. This is because the mild etching solutions used in the present in...

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Abstract

An edge cleaning system and method are disclosed in which a directional flow of a mild etching solution (230) is provided to the edge region of a rotating workpiece (100), including front surface edges and bevels, while maintaining contact between the workpiece and the directional flow. Potential difference. In one aspect, the present invention provides an edge cleaning system housed in the same process chamber used for workpiece deposition or removal processes. On the other hand, the mild etching solution used for edge removal is also used to clean the front surface of the wafer, either simultaneously with the edge removal process or sequentially.

Description

[0001] related application [0002] This application is a continuation-in-part of U.S. Serial No. 10 / 032,318 (NT-239-US), filed December 21, 2001, and claims U.S. Provisional Serial No. 60 / 424,936 (NT-252-P ), the entire contents of which are incorporated herein by reference. technical field [0003] The present invention relates generally to semiconductor processing techniques, and more particularly to systems and processes for removing conductive layers from workpiece edges and / or bevels and freeing these regions of unwanted impurities. Background technique [0004] In the semiconductor industry, a number of processes can be used to deposit and remove conductive layers on wafers. Deposition techniques include processes such as electrochemical deposition (ECD) and electrochemical mechanical deposition (ECMD). In both processes, a conductor such as copper is deposited onto a semiconductor wafer or workpiece from an electrolyte that is in contact with the surface of the waf...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C25F3/12C25F3/14C25F7/00H01L21/00H01L21/304H01L21/3063
CPCC25F3/14C25F7/00H01L21/67051H01L21/6708H01L21/306H01L21/3063
Inventor 布林特·M·巴索
Owner NUTOOL